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2SK2410

Description
Power Field-Effect Transistor, 30A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-45F, ISOLATED TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size112KB,8 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

2SK2410 Overview

Power Field-Effect Transistor, 30A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-45F, ISOLATED TO-220, 3 PIN

2SK2410 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNEC Electronics
Parts packaging codeTO-220AB
package instructionMP-45F, ISOLATED TO-220, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)90 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)30 A
Maximum drain-source on-resistance0.06 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)120 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2410
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2410 is N-Channel MOS Field Effect Transistor de-
signed for high speed switching applications.
PACKAGE DIMENSIONS
(in millimeters)
10.0 ±0.3
4.5 ±0.2
3.2 ±0.2
2.7 ±0.2
FEATURES
Low On-Resistance
R
DS(on)1
= 40 mΩ MAX. (@ V
GS
= 10 V, I
D
= 15 A)
15.0 ±0.3
3 ±0.1
4 ±0.2
12.0 ±0.2
13.5
MIN.
R
DS(on)2
= 60 mΩ MAX. (@ V
GS
= 4 V, I
D
= 15 A)
Low C
iss
C
iss
= 1500 pF TYP.
High Avalanche Capability Ratings
Built-in G-S Gate Protection Diodes
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended
applications.
0.7 ±0.1
2.54
1.3 ±0.2
1.5 ±0.2
2.54
0.65 ±0.1
2.5 ±0.1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
60
±20
±30
±120
35
2.0
150
30
90
V
V
A
A
W
W
˚C
Gate
Drain
1 2 3
1. Gate
2. Drain
3. Source
MP-45F(ISOLATED TO-220)
Total Power Dissipation (T
c
= 25 ˚C) P
T1
Total Power Dissipation (T
A
= 25 ˚C) P
T2
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
*
PW
10
µ
s, Duty Cycle
1 %
T
ch
T
stg
I
AS
E
AS
–55 to +150 ˚C
A
mJ
Body
Diode
Gate Protection
Diode
Source
**
Starting T
ch
= 25 ˚C, R
G
= 25
Ω,
V
GS
= 20 V
0
The information in this document is subject to change without notice.
Document No. TC-2497
(O. D. No. TC-8029)
Date Published November 1994 P
Printed in Japan
©
1994
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