DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3110
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3110 is N channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
and designed for high voltage applications such as DC/DC
converter, actuator driver.
ORDERING INFORMATION
PART NUMBER
2SK3110
PACKAGE
Isolated TO-220
FEATURES
•Gate
voltage rating
±30
V
•Low
on-state resistance
R
DS(on)
= 180 mΩ MAX. (V
GS
= 10 V, I
D
= 7.0 A)
•Low
input capacitance
C
iss
= 1000 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
•Built-in
gate protection diode
•Avalanche
capability rated
•Isolated
TO-220 package
ABSOLUTE MAXIMUM RATING (T
A
= 25
°C
)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current(DC) (T
C
= 25°C)
Drain Current(pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
200
±30
±14
±42
2.0
35
150
−55
to +150
14
98
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Note1.
PW
≤
10
µ
s, Duty Cycle
≤
1 %
2.
Starting T
ch
= 25°C, V
DD
= 100 V, R
G
= 25
Ω
, V
GS
= 20 V→0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13333EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP (K)
Printed in Japan
The mark
5
shows major revised points.
©
1998,1999, 2000
2SK3110
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Characteristics
Drain Leakage Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Symbol
I
DSS
I
GSS
V
GS(off)
Test Conditions
V
DS
= 200 V, V
GS
= 0 V
V
GS
=
±30
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 7.0 A
V
GS
= 10 V, I
D
= 7.0 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 100 V, I
D
= 7.0 A
V
GS(on)
= 10 V
R
G
= 10
Ω
MIN.
TYP.
MAX.
100
±10
Unit
µ
A
µ
A
V
S
2.5
3.0
120
1000
300
150
25
70
80
40
4.5
| y
fs
|
Drain to Source On-state Resistance R
DS(on)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
180
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
V
DD
= 160 V
V
GS
= 10 V
I
D
= 14 A
I
F
= 14 A, V
GS
= 0 V
I
F
= 14 A, V
GS
= 0 V
di/dt = 50 A/
µ
s
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
40
7
25
1.0
300
1.5
µ
C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
L
V
DD
PG.
R
G
R
G
= 10
Ω
V
GS
R
L
V
DD
I
D
90 %
90 %
I
D
V
GS
Wave Form
0
10 %
V
GS(on)
90 %
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µs
Duty Cycle
≤
1 %
I
D
Wave Form
0
10 %
t
d(on)
t
on
t
r
t
d(off)
t
off
10 %
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D13333EJ1V0DS00
2SK3110
5
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
50
45
V
GS
= 30 V
100
FORWARD TRANSFER CHARACTERISTICS
Pulsed
I
D
- Drain Current - A
35
30
25
20
15
10
5
0
Pulsed
0
2
4
6
8
10
V
DS
-
Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
5.0
V
DS
= 10 V
I
D
= 1 mA
4.5
4.0
3.5
3.0
2.5
2.0
0
25 50
75 100 125 150
−
50
−
25
T
ch
- Channel Temperature - ˚C
I
D
- Drain Current - A
40
10
V
GS
= 10 V
1
0.1
0.01
T
ch
= 125˚C
75˚C
25˚C
-25˚C
V
DS
= 10 V
9 10 11 12
0.001
0
1
2
3
4
5
6
7
8
V
GS
-
Gate to Source Voltage - V
|y
fs
| - Forward Transfer Admittance - mΩ
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
V
DS
=10 V
Pulsed
V
GS(off)
- Gate to Source Cut-off Voltage - V
10
T
ch
= -25˚C
T
ch
= 25˚C
1
T
ch
= 75˚C
T
ch
= 125˚C
0.1
0.01
0.01
0.1
1
10
100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
500
Pulsed
450
400
350
300
250
200
150
100
50
0
0
2
4
6
8
10 12 14 16 18
20
I
D
= 14 A
7.0 A
2.8 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
300
250
200
150
V
GS
= 10 V
100
50
0
V
GS
= 30 V
Pulsed
0.1
1
10
100
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
Data Sheet D13333EJ1V0DS00
3
2SK3110
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
350
300
250
200
150
100
50
0
−
50
−
25
V
GS
= 10 V
Pulsed
0
25 50
75 100 125 150
T
ch
- Channel Temperature - ˚C
I
D
= 14 A
I
D
= 7.0 A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
I
SD
- Diode Forward Current - A
10
V
GS
= 10 V
1
V
GS
= 0 V
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
SWITCHING CHARACTERISTICS
1 000
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= 0 V
f = 1 MHz
t
r
1000
C
iss
100
t
f
t
d(off)
t
d(on)
100
C
oss
C
rss
10
0.1
10
1
1
10
100
V
DS
- Drain to Source Voltage - V
1000
0.1
1
V
DD
= 100 V
V
GS
= 10 V
R
G
= 10
Ω
10
100
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1 000
V
DS
- Drain to Source Voltage - V
t
rr
- Reverse Recovery Time - ns
150
100
V
DD
= 160 V
100 V
40 V
12
10
8
6
100
V
DD
= 160 V
100 V
40 V
10
50
4
2
1
0.1
di/dt = 50A /
µ
s
V
GS
= 0 V
1
10
100
0
0
10
20
30
40
50
0
60
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
4
Data Sheet D13333EJ1V0DS00
V
GS
- Gate to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
16
200
I
D
= 14 A
14
2SK3110
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
40
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Percentage of Rated Power - %
100
80
60
40
20
0
P
T
- Total Power Dissipation - W
0
20
40
60
80
100 120 140 160
30
20
10
0
0
20
40
60
80
100 120 140 160
T
C
- Case Temperature - ˚C
T
C
- Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
I
D(pulse)
PW
10
1
0
µ
s
I
D
- Drain Current - A
10
R
d
ite
Lim
)
(on
I
D(DC)
DS
Po
w
=
10
µ
s
er
1
10
m
s
0
Di
ss
ms
ip
at
io
n
Li
m
10
3
m
m
s
s
ite
d
T
C
= 25 ˚C
0.1 Single Pulse
1
10
100
1000
V
DS -
Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 000
r
th
(t) - Transient Thermal Resistance - ˚C/W
100
R
th(ch-A)
= 62.5˚C/W
10
R
th(ch-C)
= 3.57˚C/W
1
0.1
0.01
0.001
Single Pulse
10
µ
100
µ
1m
10 m
100 m
1
10
100
1 000
PW - Pulse Width - s
Data Sheet D13333EJ1V0DS00
5
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