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2SK812

Description
Power Field-Effect Transistor, 27A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size3MB,226 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

2SK812 Overview

Power Field-Effect Transistor, 27A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

2SK812 Parametric

Parameter NameAttribute value
MakerNEC Electronics
Parts packaging codeTO-220AB
package instructionTO-220AB, 3 PIN
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)27 A
Maximum drain-source on-resistance0.085 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)108 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
C
&
C
for Human Potential
Microcomputer
1
SEMICONDUCTOR
SELECTION GUIDE
GUIDE
BOOK
IC Memory
2
Semi-Custom IC
3
Particular Purpose IC
4
General Purpose Linear IC
5
Transistor / Diode / Thyristor
6
Microwave Device / Consumer Use High Frequency Device
7
Optical Device
8
Packages
9
Index (Quick Reference by Type Number)
10
Oct. 1995
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