MITSUBISHI THYRISTOR MODULES
TM130RZ/EZ/GZ-24,-2H
HIGH VOLTAGE HIGH POWER GENERAL USE
INSULATED TYPE
TM130RZ/EZ/GZ-24,-2H
•
I
T (AV)
•
I
F (AV)
•
V
RRM
•
•
•
•
Average on-state current ..........
130A
Average forward current ..........
130A
Repetitive peak reverse voltage
....
1200/1600V
V
DRM
Repetitive peak off-state voltage
....
1200/1600V
MIX DOUBLE ARMS
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
(RZ Type)
APPLICATION
DC motor control, NC equipment, AC motor control, contactless switches,
electric furnace temperature control, light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
(RZ)
φ6.5
M8
A
1
20
K
1
K
2
A
2
40
CR
A
1
K
1
A
2
K
2
SR
K
1
G
1
K1
G1
6
18
30
68.5
16
32
150
18
30
68.5
16
(EZ)
CR
A
1
K
1
K
2
Tab#110,
t=0.5
23 9
32
39
A
2
SR
K
1
G
1
LABEL
7
(GZ)
CR
A
1
K
1
K
2
SR
A
2
K
1
G
1
(RZ Type)
(Bold line is connective bar.)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM130RZ/EZ/GZ-24,-2H
HIGH VOLTAGE HIGH POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Voltage class
24
1200
1350
960
1200
1350
960
2H
1600
1700
1280
1600
1700
1280
Unit
V
V
V
V
V
V
Symbol
I
T (RMS)
, I
F (RMS)
I
T (AV)
, I
F (AV)
I
TSM
, I
FSM
I
2t
di/dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
V
iso
Parameter
RMS current
Average current
Surge (non-repetitive) current
I
2t
for fusing
Conditions
Ratings
205
Unit
A
A
A
A
2
s
A/µs
W
W
V
V
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Single-phase, half-wave 180° conduction, T
C
=78°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
V
D
=1/2V
DRM
, I
G
=1.0A, T
j
=125°C
130
2600
2.8
×
10
4
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
100
10
3.0
10
5.0
4.0
–40~125
–40~125
Charged part to case
Main terminal screw M8
2500
8.83~10.8
90~110
1.96~3.92
20~40
300
—
Mounting torque
Mounting screw M6
—
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Limits
Symbol
I
RRM
I
DRM
V
TM
, V
FM
dv/dt
V
GT
V
GD
I
GT
R
th (j-c)
R
th (c-f)
—
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
Forward voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Insulation resistance
T
j
=125°C, V
RRM
applied
T
j
=125°C, V
DRM
applied
T
j
=125°C, I
TM
=I
FM
=390A, instantaneous meas.
T
j
=125°C, V
D
=2/3V
DRM
T
j
=25°C, V
D
=6V, R
L
=2Ω
T
j
=125°C, V
D
=1/2V
DRM
T
j
=25°C, V
D
=6V, R
L
=2Ω
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Test conditions
Min.
—
—
—
500
—
0.25
15
—
—
10
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
30
30
1.5
—
3.0
—
100
0.22
0.1
—
Unit
mA
mA
V
V/µs
V
V
mA
°C/
W
°C/
W
MΩ
Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM130RZ/EZ/GZ-24,-2H
HIGH VOLTAGE HIGH POWER GENERAL USE
INSULATED TYPE
MAXIMUM RATINGS
Item
Thyristor
Diode
—
—
—
—
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
I
T (RMS)
I
F (RMS)
I
T (AV)
I
F (AV)
I
TSM
I
FSM
I
2t
di/dt
Item
Thyristor
Diode
P
GM
PG
(AV)
V
FGM
I
FGM
T
j
T
stg
—
—
—
—
ELECTRICAL CHARACTERISTICS
Item
Thyristor
Diode
—
—
—
—
—
I
RRM
I
DRM
V
TM
V
FM
dv/dt
V
GT
V
GD
I
GT
R
th (j-c)
R
th (c-f)
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC
10
4
7
5
3
2
CURRENT (A)
10
3
7
5
3
2
10
2
7
5
3
2
10
1
0.6
3200
T
j
=125°C
SURGE (NON-REPETITIVE)
CURRENT (A)
2800
2400
2000
1600
1200
800
400
1.0
1.4
1.8
2.2
0
1
2 3
5 7 10
20 30
50 70100
RATED SURGE (NON-REPETITIVE)
CURRENT
FORWARD VOLTAGE (V)
CONDUCTION TIME (CYCLE AT 60Hz)
GATE CHARACTERISTICS
4
3
2
GATE VOLTAGE (V)
10
1
7
5
3
2
V
FGM
=10V
V
GT
=3.0V
P
G(AV)
=
3.0W
P
GM
=10W
TRANSIENT THERMAL IMPEDANCE
(°C/W)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
10
0
2 3 5 7 10
1
0.25
0.20
0.15
T
j
=25°C
10
0
7
5 I
GT
=
100mA
3
2
10
–1
V
GD
=0.25V
I
FGM
=4.0A
7
5
410
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
GATE CURRENT (mA)
0.10
0.05
0
10
–3
2 3 5 710
–2
2 3 5 7 10
–1
2 3 5 7 10
0
TIME (s)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM130RZ/EZ/GZ-24,-2H
HIGH VOLTAGE HIGH POWER GENERAL USE
INSULATED TYPE
MAXIMUM AVERAGE POWER
DISSIPATION (SINGLE PHASE HALFWAVE)
AVERAGE POWER DISSIPATION (W)
200
120°
160
90°
120
θ=30°
80
θ
360°
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE ELEMENT
LIMITING VALUE OF THE AVERAGE
CURRENT (SINGLE PHASE HALFWAVE)
150
140
CASE TEMPERATURE (°C)
130
120
110
100
90
80
70
60
50
0
40
80
120
160
200
θ=30°
60° 90° 120°
180°
θ
360°
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE ELEMENT
180°
60°
40
0
0
40
80
120
160
200
AVERAGE CURRENT (A)
AVERAGE CURRENT (A)
AVERAGE POWER DISSIPATION (W)
400
MAXIMUM AVERAGE
POWER DISSIPATION
(RECTANGULAR WAVE)
LIMITING VALUE OF THE AVERAGE
CURRENT (RECTANGULAR WAVE)
130
CASE TEMPERATURE (°C)
120
110
100
90
80
70
60
θ=30°
90° 180°
60° 120° 270° DC
80 120 160 200 240 280 320
AVERAGE CURRENT (A)
θ
360°
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE ELEMENT
320
θ
360°
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE ELEMENT
DC
240
160
θ=30°
80
60°
270°
180°
120°
90°
0
0
40
80
120
160
200
50
0
40
AVERAGE CURRENT (A)
Feb.1999
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