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RS1M

Description
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size114KB,2 Pages
ManufacturerPacelader Industrial
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RS1M Overview

1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC

RS1M Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPlastic, SMA, 2 PIN
stateTRANSFERRED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingNOT SPECIFIED
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Diode typeSignal diode
Maximum reverse recovery time0.5000 us
Maximum repetitive peak reverse voltage1000 V
Maximum average forward current1 A
RS1A thru RS1M
SURFACE MOUNT FAST RECOVERY RECTIFIER
VOLTAGE - 50 TO 1000 VOLTS
CURRENT - 1.0 AMPERES
SMA/DO-214AC
.055(1.40)
.062(1.60)
.098(2.50)
.114(2.90)
.157(4.00)
.181(4.60)
.006(.152)
.012(.305)
.078(2.00)
.096(2.44)
.030(0.76)
.060(1.52)
.004(.102)
.008(.203)
.188(4.80)
.208(5.28)
Dimensions in inches and (millimeters)
FEATURES
Ldeaf for surface mount applications
Easy pick and place
Buit-in strain relief
Fast switching speed
MECHANICAL DATA
Case JEDEC DO-214AC molded plastic
Epoxy UL 94V-0 rate flame retardant
Metallurgically bonded construction
Polarity Color band denotes cathode end
Mounting position Any
Weight 0.063 grams
MAXIMUM RATIXGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load
For capacitive load, derate current by 20%
SYMBOL RS1A
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current .0375
(9.5mm)Lead Length at T
A
=50
0
C
Peak Forward Surge Current 8.3ms Single Half Sine-Wave
Superimposed on Rated Load (JEDEC Method)
Maximum Instantaneoue at 1.0A DC
Maximum DC Reverse Current @TA=25
0
C
at Rated DC Blocking Voltage @TA=100
0
C
Maximum Reverse Recovery Time (NOTE 1)
Typical Junction Capacitance (NOTE 2)
Operating Temperature Range
Storage Temperature Range
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
RS1B
100
70
100
RS1D
200
140
200
RS1G
400
280
400
1.0
RS1J
600
420
600
RS1K
800
560
800
RS1M
1000
700
1000
UNITS
Volts
Volts
Volts
Amps
I
FSM
V
F
I
R
T
RR
C
J
T
J
T
STG
150
30
1.3
5.0
100
250
15
+175
500
Amps
Volts
A
nS
pF
0
C
C
-65 to +175
0
NOTES
1. Rverse Recovery Time Test Condibons: I
F
=0.5A, I
R
=1.0A, l
RR
=0.25A
2. Measured at 1 MHz and applied reverse Voltag of 4.0VDC
www.paceleader.tw
1

RS1M Related Products

RS1M RS1A RS1B RS1D RS1G RS1J RS1K
Description 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC 0.7 A, SILICON, SIGNAL DIODE SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC SIGNAL DIODE SIGNAL DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC
state TRANSFERRED ACTIVE ACTIVE - ACTIVE ACTIVE ACTIVE
Diode type Signal diode SIGNAL DIODE SIGNAL DIODE - Signal diode Signal diode SIGNAL DIODE

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