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B125-C1500

Description
SILICON BRIDGE RECTIFIERS
File Size25KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
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B125-C1500 Overview

SILICON BRIDGE RECTIFIERS

B40 - B380/C1500R
PRV : 100 - 900 Volts
Io : 1.5 Amperes
FEATURES :
*
*
*
*
*
*
High case dielectric strength
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Ideal for printed circuit board
SILICON BRIDGE RECTIFIERS
WOB
0.39 (10.0)
0.31 (7.87)
0.22 (5.59)
0.18 (4.57)
+
AC
-
1.00 (25.4)
MIN.
1.10 (27.9)
MIN.
0.034 (0.86)
0.028 (0.71)
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated leads solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 1.29 grams
AC
+
-
AC
0.22 (5.59)
0.18 (4.57)
0.22 (5.59)
0.18 (4.57)
Dimension in inches and (millimeter)
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Input Voltage R+C -Load
Maximum DC Blocking Voltage
Maximum Average Forward Current For
Free Air Operation at Tc = 45
°
C R+L -Load
C -Load
Peak Forward Surge Current Single half sine wave
on rated load (JEDEC Method) at T
J
= 125
°
C
Rating for fusing at T
J
= 125
°
C ( t < 100 ms. )
Maximum Series Resistor C-Load V
RMS
=
±
10%
Maximum load Capacitance
+ 50%
-10%
Maximum Forward Voltage per Diode at I
F
= 1.5 Amps.
Maximum Reverse Current at Rated Repetitive
Peak Voltage per Diode
Ta = 25
°
C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
B40-
B80-
B125- B250- B380-
C1500R C1500R C1500R C1500R C1500R
100
40
100
200
80
200
300
125
300
1.6
1.5
50
10
4.0
1000
1.0
10
36
- 50 to + 125
- 50 to + 150
600
250
600
900
380
900
UNIT
Volts
Volts
Volts
Amps.
I
FSM
I
2
t
Rt
C
L
V
F
I
R
R
θ
JA
T
J
T
STG
1.0
5000
2.0
2500
8.0
500
12.0
200
Amps.
A
2
S
µ
F
Volts
µ
A
°
C/W
°
C
°
C
Notes :
1 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board with, 0.22" x 0.22" (5.5 x 5.5 mm) copper Pads.
UPDATE : APRIL 23,1998

B125-C1500 Related Products

B125-C1500 B125-C1500R B250-C1500R B380-C1500R B40-1500R B40-C1500R B80-C1500R
Description SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS
Is it lead-free? - Lead free Lead free Lead free - Lead free Lead free
Is it Rohs certified? - conform to conform to conform to - conform to conform to
Maker - EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] - EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
package instruction - O-PBCY-W4 O-PBCY-W4 O-PBCY-W4 - O-PBCY-W4 O-PBCY-W4
Reach Compliance Code - compliant compliant compli - compliant compli
ECCN code - EAR99 EAR99 EAR99 - EAR99 EAR99
Other features - HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY - HIGH RELIABILITY HIGH RELIABILITY
Minimum breakdown voltage - 300 V 600 V 900 V - 100 V 200 V
Shell connection - ISOLATED ISOLATED ISOLATED - ISOLATED ISOLATED
Configuration - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials - SILICON SILICON SILICON - SILICON SILICON
Diode type - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) - 1 V 1 V 1 V - 1 V 1 V
JESD-30 code - O-PBCY-W4 O-PBCY-W4 O-PBCY-W4 - O-PBCY-W4 O-PBCY-W4
Maximum non-repetitive peak forward current - 50 A 50 A 50 A - 50 A 50 A
Number of components - 4 4 4 - 4 4
Phase - 1 1 1 - 1 1
Number of terminals - 4 4 4 - 4 4
Maximum operating temperature - 125 °C 125 °C 125 °C - 125 °C 125 °C
Minimum operating temperature - -50 °C -50 °C -50 °C - -50 °C -50 °C
Maximum output current - 1.6 A 1.6 A 1.6 A - 1.6 A 1.6 A
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - ROUND ROUND ROUND - ROUND ROUND
Package form - CYLINDRICAL CYLINDRICAL CYLINDRICAL - CYLINDRICAL CYLINDRICAL
Guideline - TS 16949 TS 16949 TS 16949 - TS 16949 TS 16949
Maximum repetitive peak reverse voltage - 300 V 600 V 900 V - 100 V 200 V
surface mount - NO NO NO - NO NO
Terminal form - WIRE WIRE WIRE - WIRE WIRE
Terminal location - BOTTOM BOTTOM BOTTOM - BOTTOM BOTTOM

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