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WTN9575

Description
Surface Mount P-Channel Enhancement Mode Power MOSFET
File Size1MB,6 Pages
ManufacturerWeitron Technology
Websitehttp://weitron.com.tw/
Download Datasheet View All

WTN9575 Overview

Surface Mount P-Channel Enhancement Mode Power MOSFET

WTN9575
Surface Mount P-Channel
Enhancement Mode Power MOSFET
P b
Lead(Pb)-Free
2,4 DRAIN
DRAIN CURRENT
-4.0 AMPERES
DRAIN SOURCE VOLTAGE
-60 VOLTAGE
1
GATE
Features:
* Super high dense cell design for low R
DS
(ON)
R
DS
(ON) < 90m @ V
GS
= -10V
* Simple Drive Requirement
* Lower On-Resistance
* Fast Switching
3
SOURCE
1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
4
1
2
3
SOT-223
Maximum Ratings
(TA=25°C Unless Otherwise Specified)
Rating
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
,VGS@10V(T
A
=25°C)
,VGS@10V(T
A
=70°C)
Pulsed Drain Current
1
Total Power Dissipation(T
A
=25°C)
Maximum Junction-ambient
3
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
θJA
T
J
T
stg
Value
-60
±25
-4.0
-3.2
-20
3.0
45
+150
-55 ~ +150
Unit
V
V
A
A
W
°C/W
°C
°C
Device Marking
WTN9575 = 9575
WEITRON
http:www.weitron.com.tw
1/6
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