KTC4377
NPN EPITAXIAL PLANAR TRANSISTOR
P b
Lead(Pb)-Free
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
Features:
* Low saturation voltage,
V
CE
(sat) ≤0.5V@2A/50mA
* Excellent DC current gain characteristics.
SOT-89
Mechanical Data:
* Case : Molded Plastic
ABSOLUTE MAXIMUM RATINGS(T
a
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Disspation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
TJ
Tstg
Value
30
10
6
2
0.5
150
-55 - 150
Unit
V
V
V
A
W
˚C
˚C
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KTC4377
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Base Breakdown Voltage
I
C
=1mA,I
E
=0
Collector-Emitter Breakdown Voltage
I
C
=10mA,I
B
=0
Emitter-Base Breakdown Voltage
I
C
=0,I
E
=1mA
Collector Cut-O Current
I
E
=0,V
CB
=30V
Emitter-Cut-O Current
I
C
=0,V
EB
=6V
ON CHARACTERISTICS
*
DC Current Gain
I
C
=0.5A,V
CE
=1V
I
C
=2A,V
CE
=1V
Collector-Emitter Saturation Voltage
I
C
=2A, I
B
=50mA
Base-emitter on voltage
I
C
=2A,V
CE
=1V
*Pulse Test: Pluse Width ≤ 380µs, Duty Cycle ≤ 2%.
DYNAMIC CHARACTERISTICS
Transition Frequency
I
C
=0.5A,V
CE
=1V
Collector Output Capacitance
I
E
=0,V
CB
=10V,f=1MHz
f
T
C
ob
-
-
150
27
-
-
MHz
pF
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(on)
140
70
-
-
-
-
-
-
600
-
0.5
1.5
-
-
V
V
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Min
30
10
6
-
-
Typ
-
-
-
-
-
Max
-
-
-
0.1
0.1
Unit
V
V
V
µA
µA
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
A
140-240
SA
B
200-330
SB
C
300-450
SC
D
420-600
SD
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KTC4377
Typical Characterisrics
4.0
60
25
15
10
2.0
I
B
= 5mA
COMMON EMITTER
1k
I
C
[mA],COLLECTOR CURRENT
hFE,DC CURRENT GAIN
500
300
3.0
100
50
30
COMMON EMITTER
V
CE
= 1V
1.0
0
0
1.0
2.0
3.0
4.0
5.0
6.0
0
10
0.01
0.03
0.1
0.3
1
3
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Fig.1 I
C
- V
CE
1
COMMON EMITTER
I
C
/I
B
= 10
Fig.2 h
FE
- I
C
4.0
3.2
2.4
1.6
0.8
0
I
C
[mA],COLLECTOR CURRENT
I
C
[mA],COLLECTOR CURRENT
0.5
0.3
COMMON EMITTER
V
CE
= 1V
0.1
0.05
0.03
0.01
0.01
0.03
0.1
0.3
1
3
10
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
BE
[V], BASE EMITTER VOLTAGE
Fig.3 V
CE(sat)
- I
C
10
I
C
MAX(PULSE)
Fig.4 I
C
- V
BE
COLLECTOR POWER DISSIPATION PC (W)
1.2
1.0
0.8
0.6
0.4
0.2
0
2
1
2
1
I
C
[mA],COLLECTOR CURRENT
3
I
C
MAX(CONTI-
NUOUS)
DC
10
0m
S
MOUNTED ON CERAMIC
SUBSTRATE
(250mm
2
x0.8t)
s
m
10
1
0.3
0.1
0.03
0.01
0.1
O
PE
RA
TI
O
N
SING
NONREPETITIVE
CURVES MUST BE
DERATED LINEARLY
WITH IN CREASE IN
TEMPERATURE
0
20
40
60
80
100
120
140
160
0.3
1
3
10
30
100
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Fig.6 PC - T
a
Fig.5 SAFE OPERATING AREA
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KTC4377
SOT-89 Outline Dimensions
unit:mm
E
G
Dim
A
SOT-89
J
C
H
K
L
B
D
A
B
C
D
E
G
H
J
K
L
Min
Max
1.400
1.600
0.320
0.520
0.360
0.560
0.350
0.440
4.400
4.600
1.400
1.800
2.300
2.600
3.940
4.250
1.500TYP
2.900
3.100
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