DTC114EM Series
Bias Resistor Transistor NPN Silicon
P b
Lead(Pb)-Free
1
BASE
R1
R2
COLLECTOR
3
3
1
2
2
EMITTER
SOT-723
Maximum Ratings
(T
A
=25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current-Continuous
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
V
V
mA
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board
FR-4 Board
(1)
T
A
=25˚C
Derate above 25˚C
Thermal Resistance, Junction to Ambient
(1)
Total Device Dissipation FR-5 Board
FR-4 Board
(2)
T
A
=25˚C
Derate above 25˚C
Thermal Resistance, Junction to Ambient
(2)
Junction Temperature Range
Storage Temperature Range
1. FR-4 @ Minimum pad
2. FR-4 @1.0 x 1.0 Inch pad
Symbol
P
D
R
θJA
P
D
R
θJA
T
J
Tstg
Max
260
2.0
480
600
4.8
205
+150
-55 to +150
Unit
mW
mW/°C
˚C/W
mW
mW/°C
°C/W
°C
°C
Device Marking and Resistor Values
Device
DTC114EM
DTC124EM
DTC144EM
DTC114YM
DTC114TM
DTC143TM
DTC123EM
Marking
8A
8B
8C
8D
94
8F
8H
R1(K)
10
22
47
10
10
4.7
2.2
R2(K)
10
22
47
47
∞
∞
2.2
Device
DTC143EM
DTC143ZM
DTC124XM
DTC123JM
DTC115EM
DTC144WM
DTC144TM
Marking
8J
8K
8L
8M
8N
8P
8T
R1(K)
4.7
4.7
22
2.2
100
47
47
R2(K)
4.7
47
47
47
100
22
∞
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11-Apr-07
DTC114EM Series
Electrical Characteristics
(T
A
=25˚C Unless Otherwise noted)
Characteristics
Symbol
Min
Typ
WEITRON
Max
Unit
Off Characteristics
Collector-Emitter Breakdown Voltage
(1)
I
C
=2.0mA, I
B
=0
Collector-Base Breakdown Voltage
I
C
=10µA, I
E
=0
Collector-Base Cutoff Voltage
V
CB
=50V, I
E
=0
Collector-Emitter Cutoff Current
V
CE
=50V, I
B
=0
Emitter-Base Cutoff Current
V
EB
=6.0V, I
C
=0
DTC114EM
DTC124EM
DTC144EM
DTC114YM
DTC114TM
DTC143TM
DTC123EM
DTC143EM
DTC143ZM
DTC124XM
DTC123JM
DTC115EM
DTC144WM
DTC144TM
V
(BR)CEO
V
(BR)CBO
I
CBO
I
CEO
50
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
500
0.5
0.2
0.1
0.2
0.9
1.9
2.3
1.5
0.18
0.13
0.2
0.05
0.13
0.2
V
V
nA
nA
I
EBO
mA
3. Pulse Test: Pulse Width < 300us, Duty Cycle < 2.0%
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DTC114EM Series
Electrical Characteristics
(T
A
=25°C Unless Otherwise noted)
Characteristics
Symbol
Min
Typ
WEITRON
Max
Unit
On Characteristics
(3)
DC Current Gain
V
CE
=10V, I
C
=5.0mA
DTC114EM
DTC124EM
DTC144EM
DTC114YM
DTC114TM
DTC143TM
DTC123EM
DTC143EM
DTC143ZM
DTC124XM
DTC123JM
DTC115EM
DTC144WM
DTC144TM
35
60
80
80
160
160
8.0
15
80
80
80
80
80
160
60
100
140
140
250
250
15
27
140
130
140
150
140
350
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
h
FE
-
Collector-Emitter Saturation Voltage
I
C
=10mA, I
B
=0.3mA
DTC123EM
I
C
=10mA, I
B
=5.0mA
DTC143TM / DTC114TM
I
C
=10mA, I
B
=1.0mA
DTC143EM / DTC143ZM
DTC124XM / DTC144TM
Output Voltage(on)
V
CC
=5.0V, V
B
=2.5V R
L
=1.0KΩ
DTC114EM
DTC124EM
DTC114YM
DTC114TM
DTC143TM
DTC123EM
DTC143EM
DTC143ZM
DTC124XM
DTC123JM
DTC144EM
DTC144TM
DTC115EM
DTC144WM
V
CE(sat)
-
-
0.25
-
V
OL
-
-
0.2
V
V
CC
=5.0V, V
B
=3.5V R
L
=1.0KΩ
V
CC
=5.0V, V
B
=5.5V R
L
=1.0KΩ
V
CC
=5.0V, V
B
=4.0V R
L
=1.0KΩ
3. Pulse Test: Pulse Width < 300us, Duty Cycle < 2.0%
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DTC114EM Series
ElectricalCharacteristics
(T
A
=25°C Unless Otherwise noted)
Characteristics
Symbol
Min
Typ
WEITRON
Max
Unit
On Characteristics
(4)
Output Voltage(off)
V
CC
=5.0V, V
B
=0.5V R
L
=1.0KΩ
V
CC
=5.0V, V
B
=0.25V R
L
=1.0KΩ
DTC143TM
DTC143ZM
DTC114TM
DTC144TM
DTC114EM
DTC124EM
DTC144EM
DTC114YM
DTC114TM
DTC143TM
DTC123EM
DTC143EM
DTC143ZM
DTC124XM
DTC123JM
DTC115EM
DTC144WM
DTC144TM
DTC114EM / DTC124EM
DTC144EM / DTC115EM
DTC114YM
DTC143TM / DTC114TM / DTC144TM
DTC123EM / DTC143EM
DTC143ZM
DTC124XM
DTC123JM
DTC144WM
V
OH
4.9
-
-
V
Input Resistor
R1
7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
3.3
15.4
15.4
70
32.9
32.9
0.8
0.17
-
0.8
0.055
0.38
0.038
1.7
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
47
1.0
0.21
-
1.0
0.1
0.47
0.047
2.1
13
28.6
61.1
13
13
6.1
2.9
6.1
6.1
28.6
2.86
130
61.1
61.1
1.2
0.25
-
1.2
0.185
0.56
0.056
2.6
kΩ
Resistor Ratio
R1/R2
-
4. PulseTest: Pulse Width < 300us, Duty Cycle < 2.0%
300
POWER DISSIPATION, P
D
250
200
150
100
50
0
R
JA
= 480°C/W
T
A
, AMBIENT TEMPERATURE ( °C)
Figure.1 Derating Curve
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DTC114EM Series
TYPICAL ELECTRICAL CHARACTERISTICS -
DTC114EM Series
WEITRON
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (V)
1
I
C
/I
B
= 10
T
A
°C
25°C
0.1
75°C
0.01
0.001
0
20
40
I
C
, COLLECTOR CURRENT (mA)
50
Figure.2 V
CE(sat)
vs I
C
h FE, DC CURRENT GAIN (NORMALIZED)
1000
Cob , CAPACITANCE (pF)
V
CE
= 10 V
T
A
°C
25°C
−25
°C
4
f = 1 MHz
I
E
= 0 V
T
A
= 25°C
3
100
2
1
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (V)
50
Figure.3 DC Current Gain
Figure.4 Output Capacitance
100
I
C
, COLLECTOR CURRENT (mA)
75°C
10
1
0.1
0.01
25°C
T
A
°C
10
V
O
= 0.2 V
V in, INPUT VOLTAGE (V)
T
A
°C
25°C
75°C
1
V
O
= 5 V
0.001
0
1
2
3
4
5
6
7
8
9
10
0.1
0
10
20
30
40
50
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure.5 Output Current vs Input Voltage
Figure.6 Input Voltage vs Output Current
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Embedded System
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