DTD123Y
Bias Resistor Transistor NPN Silicon
P b
Lead(Pb)-Free
1
BASE
COLLECTOR
3
3
1
2
R1
R2
2
EMITTER
SOT-23
Absolute maximum ratings
(TA = 25ºC)
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Symbol
Vcc
V
IN
I
C
Pd
Tj
Tstg
Limits
50
-5~+12
500
200
150
-55~+150
Unit
V
V
mA
mW
Electrical characteristics
(TA = 25ºC)
Parameter
Symbol Min
V
I
(off)
-
Input voltage
V
I
(on)
2
-
Output voltage
Vo(on)
-
Input current
I
I
-
Output current
Io(off)
DC current gain
h FE
56
Input resistance
R
1
1.54
Resistance ratio
R
2
/R
1
3.6
-
Transition frequency
f
T
*
Transition frequency of the device
Typ
-
-
0.1
-
-
-
2.2
4.5
200
Max
0.3
-
0.3
3.6
0.5
-
2.86
5.5
-
Conditions
Vcc = 5V,Io = 100µA
V
Vo = 0.3V,Io = 20 mA
V
Io/I
I
= 50 mA/2.5 mA
mA
V
I
= 5V
µA
Vcc = 50V,V
I
= 0V
Vo = 5V,Io=50 mA
-
kΩ
-
MH
Z
V
CE
= 10V,I
E
= -500m A,f = 100MH
Z
*
Unit
DEVICE MARKING : F62
WEITRON
http://www.weitron.com.tw
1/3
25-Apr-08
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EEWORLD
