Zowie Technology Corporation
Switching Transistor
NPN Silicon
Lead free product
Halogen-free type
3
BASE
1
2
2
EMITTER
COLLECTOR
3
MMBT4401GH
1
SOT-23
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
40
60
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board
o
Derate above 25 C
(1)
Symbol
T
A
=25 C
o
Max.
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW /
o
C
o
P
D
R
JA
o
Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate,
(2)
T
A
=25 C
o
Derate above 25 C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
C/W
P
D
R
JA
T
J,
T
STG
mW
mW /
o
C
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
(T
A
=25 C unless otherwise noted)
Characteristic
Symbol
Min.
Max.
Unit
o
OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage
( I
C
=1.0mAdc, I
B
=0 )
Collector-Base Breakdowe Voltage
( I
C
=0.1 mAdc, I
E
=0 )
Emitter-Base Breakdowe Voltage
( I
E
=0.1 mAdc, I
C
=0 )
Base Cutoff Current
( V
CE
=35 Vdc, V
EB
=0.4 Vdc )
Collector Cutoff Current
( V
CE
=35 Vdc, V
EB
=0.4 Vdc )
(3)
V
(BR)CEO
40
-
Vdc
V
(BR)CBO
60
-
Vdc
V
(BR)EBO
6.0
-
Vdc
I
BEV
-
0.1
uAdc
I
CEX
-
0.1
uAdc
09/2001
Zowie Technology Corporation
Zowie Technology Corporation
o
ELECTRICAL CHARACTERISTICS
(T
A
=25 C unless otherwise noted) (Continued)
Characteristic
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
DC Current Gain
( I
C
=0.1 mAdc, V
CE=
1.0 Vdc )
( I
C
=1.0 mAdc, V
CE=
1.0 Vdc )
( I
C
=10 mAdc, V
CE=
1.0 Vdc )
( I
C
=150 mAdc, V
CE=
1.0 Vdc )
( I
C
=500 mAdc, V
CE=2
.0 Vdc )
Collector-Emitter Saturation Voltage
( I
C
=150 mAdc, I
B
=15 mAdc )
( I
C
=500 mAdc, I
B
=50 mAdc )
Base-Emitter Saturation Voltage
( I
C
=150 mAdc, I
B
=15 mAdc )
( I
C
=500 mAdc, I
B
=50 mAdc )
(3)
(3)
H
FE
20
40
80
100
40
-
-
-
300
-
-
V
CE
(sat)
-
-
0.4
0.75
Vdc
V
BE
(sat)
0.75
-
0.95
1.2
Vdc
SMALL-SIGNAL CHARACTERISTIC
Current-Gain-Bandwidth Product
( I
C
=20 mAdc, V
CE
=10 Vdc, f=100 MH
Z
)
Collector-Base Capacitance
( V
CB
=5.0 Vdc, I
E
=0, f=1.0 MH
Z
)
Emitter-Base Capacitance
( V
EB
=0.5 Vdc, I
C
=0, f=1.0 MH
Z
)
Input Impedance
( V
CE
=10 Vdc, I
C
=1.0 mAdc, f=1.0 kH
Z
)
Voltage Feedback Ratio
( V
CE
=10 Vdc, I
C
=1.0 mAdc, f=1.0 kH
Z
)
Small-Signal Current Gain
( V
CE
=10 Vdc, I
C
=1.0 mAdc, f=1.0 kH
Z
)
Output Admittance
( V
CE
=10 Vdc, I
C
=1.0 mAdc, f=1.0 kH
Z
)
f
T
250
-
MH
Z
C
cb
-
6.5
pF
C
eb
-
30
pF
h
ie
1.0
15
k ohms
h
re
0.1
8.0
X 10
-4
h
fe
40
500
-
h
oe
1.0
30
u mhos
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
( V
CC
=30 Vdc, V
BE
=2.0 Vdc,
I
C
=150 mAdc, I
B1
=15 mAdc )
( V
CC
=30 Vdc,
I
C
=150 mAdc, I
B1
=I
B2=
15 mAdc )
td
tr
ts
tf
-
-
-
-
15
20
225
30
nS
nS
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
(3) Pulse Test : Pulse Width 300uS, Duty Cycle
2.0%.
09/2001
Zowie Technology Corporation
Zowie Technology Corporation
MMBT4401GH
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30 V
1.0 to 100 us,
DUTY CYCLE = 2%
1.0 k
0
-2.0 V
< 2.0 ns
Scope rise time < 4.0 ns
* Total shunt capacitance of test jig and connectors
0
C
S
*
< 10 pF*
-14 V
< 20 ns
200
+16 V
1.0 to 100 us,
DUTY CYCLE = 2%
1.0 k
+30 V
200
+16 V
C
S
*
< 10 pF*
-4.0V
Figure 1. Turn-On Time
Figure 2. Turn-Off Time
TRANSIENT CHARACTERISTICS
30
20
10
7.0
V
CC
=30 V
I
C
/I
B
=10
CAPACITANCE ( pF )
5.0
Q, CHARGE (pC)
C
obo
10
7.0
5.0
C
cb
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10
T
J
=25 C
T
J
=100 C
o
o
Q
T
3.0
2.0
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30 50
Q
A
20
30
50
70
100
200
300
500
REVERSE BIAS VOLTAGE ( VOLTS )
I
C
, COLLECTOR CURRENT ( mA )
Figure 3. Capacitance
Figure 4. Charge Data
09/2001
Zowie Technology Corporation
Zowie Technology Corporation
TRANSIENT CHARACTERISTICS
100
70
50
I
C
/I
B
=10
MMBT4401GH
100
70
50
t
r
@ V
CC
=30V
t
r
@ V
CC
=10V
t
b
@ V
EB
=2.0V
t
d
@ V
EB
=0V
t
r
t
r
V
CC
=30 V
I
C
/I
B
=10
t, TIME ( ns )
t, TIME ( ns )
200
300
500
30
20
30
20
10
7.0
5.0
10
20
30
50
70
100
10
7.0
5.0
10
20
30
50
70
100
200
300
500
I
C
, COLLECTOR CURRENT ( mA )
I
C
, COLLECTOR CURRENT ( mA )
Figure 5. Turn-On Time
300
t
S
4 = t
S
- 1/8t
f
I
B1
= I
B2
I
C
/I
B
= 10 to 20
F igure 6. R is e and F all T imes
100
70
V
CC
=30 V
I
B1
=I
B2
t'
s
, STORAGE TIME ( ns )
200
t
f
, FALL TIME ( ns )
50
I
C
/I
B
=20
30
I
C
/I
B
=10
100
70
50
20
10
7.0
30
10
20
30
50
70
100
200
300
500
5.0
10
20
30
50
70
100
200
300
500
I
C
, COLLECTOR CURRENT ( mA )
I
C
, COLLECTOR CURRENT ( mA )
Figure 7. Storage Time
SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE
V
CE
=10 Vdc, T
A
=25 C
Bandwidth=1.0HZ
o
Figure 8. Fall Time
10
10
NF, NOISE FIGURE ( bB )
NF, NOISE FIGURE ( bB )
8.0
I
C
=1.0mA, R
S
=150
I
C
=500uA, R
S
=200
I
C
=100uA, R
S
=2.0k
I
C
=50uA, R
S
=4.0k
R
S
=OPTIMUM
SOURCE
RESISTANCE
f = 1.0 kHz
8.0
6.0
6.0
I
C
=50uA
I
C
=100uA
I
C
=500uA
I
C
=1.0mA
4.0
4.0
2.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0
0.5 1.0 2.0 5.0
10
20
50
100
50
100 200
500 1.0k 2.0k
5.0k 10k
20k
50k 100k
f, FREQUENCY (kHz)
R
S
, SOURCE RESISTANCE ( OHMS )
Figure 9.Frquency Effects
Figure 10.Source Resistance Effects
09/2001
Zowie Technology Corporation
Zowie Technology Corporation
MMBT4401GH
h PARAMETERS
o
V
CE
= 10 Vdc, f = 1.0 kH
Z
, T
A
= 25 C
This group of graphs illustrates the relationship between
hfe and and other " h " parameters for this series of transistors.
To obtain these curves, a high-gain and a low-gain unit were
300
50k
selected from the MMBT4401LT1 lines, and the same units
were used to develop the correspondingly numbered curves
on each graph.
h
ie
, INPUT IMPEDANCE (OHMS)
200
h
fe
, CURRENT GAIN
20k
10k
5.0k
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
100
70
50
2.0k
1.0k
500
30
20
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
I
C
, COLLECTOR CURRENT ( mA )
I
C
, COLLECTOR CURRENT ( mA )
Figure 11. Current Gain
F igure 12. Input Impedanc e
h
re
, VOLTAGE FEEDBACK RATIO (X 10 )
-4
10
7.0
5.0
3.0
2.0
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
100
hoe, OUTPUT ADMITTANCE(umhos)
50
MMBT4401LT1 UNIT 1
20
10
5.0
MMBT4401LT1 UNIT 2
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
2.0
1.0
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I
C
, COLLECTOR CURRENT ( mA )
I
C
, COLLECTOR CURRENT ( mA )
Figure 13. Voltage Feedback Ratio
Figure 14. Output Admittance
09/2001
Zowie Technology Corporation
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