MUR120GP datasheet, PDF - EEWORLD Datasheet

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MUR120GP: Description1 A, 200 V, SILICON, SIGNAL DIODE, DO-41; Categorysemiconductor Discrete semiconductor; File Size51KB，3 Pages; ManufacturerSHANGHAI SHANGLANG ELECTRONIC TECHNOLOGY CO., LTD.

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MUR120GP Overview

1 A, 200 V, SILICON, SIGNAL DIODE, DO-41

MUR120GP Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	DO-41, 2 PIN
state	DISCONTINUED
packaging shape	round
Package Size	LONG FORM
Terminal form	Wire
terminal coating	tin lead
Terminal location	AXIAL
Packaging Materials	UNSPECIFIED
structure	single
Shell connection	isolation
Diode component materials	silicon
Diode type	Signal diode
Maximum reverse recovery time	0.0450 us
Maximum repetitive peak reverse voltage	200 V
Maximum average forward current	1 A

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Shanghai Lunsure Electronic

Technology Co.,Ltd

Tel:0086-21-37185008

Fax:0086-21-57152769

MUR105GP

THRU

MUR160GP

1.0 Amp Glass

Passivated Super Fast

Recovery Rectifier

50 to 600 Volts

DO-41

Features

•

High Surge Capability

Low Forward Voltage Drop

High Current Capability

Super Fast Switching Speed For High Efficiency

Maximum Ratings

•

Operating Temperature: -65°C to +150°C

Storage Temperature: -65°C to +150°C

Maximum

Recurrent

Peak Reverse

Voltage

50V

100V

150V

200V

400V

600V

Maximum

RMS Voltage

35V

70V

105V

140V

280V

420V

Maximum DC

Blocking

Voltage

50V

100V

150V

200V

400V

600V

Part Number

MUR105GP

MUR110GP

MUR115GP

MUR120GP

MUR140GP

MUR160GP

D

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

I

F(AV)

1.0A

T

A

= 55°C

Current

Peak Forward Surge

I

FSM

25A

8.3ms, half sine

Current

Maximum

Instantaneous

Forward Voltage

V

F

I

FM

= 1.0A;

MUR105GP-115GP

.97V

1.35V T

A

= 25°C

MUR120GP-160GP

Maximum DC

5.0µA T

A

= 25°C

Reverse Current At

I

R

Rated DC Blocking

T

A

= 150°C

50µA

Voltage

Maximum Reverse

Recovery Time

T

rr

MUR105GP-140GP

45ns

I

F

=0.5A, I

R

=1.0A,

I

rr

=0.25A

60ns

MUR160GP

Typical Junction

Capacitance

C

J

MUR105GP-115GP

15pF

Measured at

10pF

1.0MHz, V

R

=4.0V

MUR120GP-160GP

*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%

A

Cathode

Mark

B

D

C

DIMENSIONS

INCHES

DIM

A

B

C

D

MIN

.166

.080

.028

1.000

MAX

.205

.107

.034

---

MIN

4.10

2.00

.70

25.40

MM

MAX

5.20

2.70

.90

---

NOTE

www.cnelectr.com

MUR120GP Related Products

	MUR120GP	MUR105GP	MUR110GP	MUR115GP	MUR140GP	MUR160GP
Description	1 A, 200 V, SILICON, SIGNAL DIODE, DO-41	1 A, 50 V, SILICON, SIGNAL DIODE, DO-41	1 A, 100 V, SILICON, SIGNAL DIODE, DO-41	1 A, 150 V, SILICON, SIGNAL DIODE, DO-41	1 A, 400 V, SILICON, SIGNAL DIODE, DO-41	1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
Number of terminals	2	-	2	2	-	2
Number of components	1	-	1	1	-	1
Processing package description	DO-41, 2 PIN	-	DO-41, 2 PIN	DO-41, 2 PIN	-	DO-41, 2 PIN
state	DISCONTINUED	-	DISCONTINUED	DISCONTINUED	-	DISCONTINUED
packaging shape	round	-	round	ROUND	-	round
Package Size	LONG FORM	-	LONG FORM	LONG FORM	-	LONG FORM
Terminal form	Wire	-	Wire	WIRE	-	Wire
terminal coating	tin lead	-	tin lead	TIN LEAD	-	tin lead
Terminal location	AXIAL	-	AXIAL	AXIAL	-	AXIAL
Packaging Materials	UNSPECIFIED	-	UNSPECIFIED	UNSPECIFIED	-	UNSPECIFIED
structure	single	-	single	SINGLE	-	single
Shell connection	isolation	-	isolation	ISOLATED	-	isolation
Diode component materials	silicon	-	silicon	SILICON	-	silicon
Diode type	Signal diode	-	Signal diode	SIGNAL DIODE	-	Signal diode
Maximum reverse recovery time	0.0450 us	-	0.0450 us	0.0450 us	-	0.0500 us
Maximum repetitive peak reverse voltage	200 V	-	100 V	150 V	-	600 V
Maximum average forward current	1 A	-	1 A	1 A	-	1 A

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