ZOWIE
Objective Specification
Schottky Barrier Diode
(30V / 2.0A)
SSCD203PSH
FEATURES
*
*
*
*
*
*
*
*
Halogen-free type
Lead free product, compliance to RoHS
Lead less chip form, no lead damage
Lead-free solder joint, no wire bond & lead frame
Low power loss, High efficiency
High current capability
Low forward voltage drop
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
OUTLINE DIMENSIONS
Case : 1206-S
1.60 ± 0.1
Unit : mm
3.40 ± 0.1
0.05
R0.
40
0.70 ± 0.2
1.50
Typ.
0.70 ± 0.2
APPLICATION
*
*
*
*
*
Switching mode power supply applications
Portable equipment battery applications
High frequency rectification
DC / DC Converter
Telecommunication
0.93
± 0.05
Equivalent : SOD-123
MARKING
MECHANICAL DATA
Case :
Packed with FRP substrate and epoxy underfilled
Terminals :
Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, Method 2026.
Polarity :
Laser Cathode band marking
Weight :
0.012 gram
Cathode mark
Amps class
Voltage class
L3
PS
.
Low VF & Low IR
Halogen-free type
Small Package
PACKING
*
3,000 pieces per 7" (178mm ± 2mm) reel
*
4 reels per box
*
6 boxes per carton
Absolute Maximum Ratings (Ta = 25 C)
ITEM
Repetitive peak reverse voltage
Average forward current
Peak forward surge current
Operating junction temperature Range
Storage temperature Range
o
Symbol
V
RRM
I
F(AV)
I
FSM
T
j
T
STG
Conditions
Rating
30
2.0
Unit
V
A
A
o
o
8.3ms single half sine-wave
50
150
-55 to +150
C
C
Electrical characteristics (Ta = 25 C)
ITEM
Symbol
Conditions
Min.
Typ.
Max.
Unit
o
Forward voltage (NOTE 1)
V
F
I
F
= 2.0A
-
0.37
0.44
V
Repetitive peak reverse current (NOTE 1)
Junction capacitance
I
RRM
C
j
R
th(JA)
V
R
= Max. V
RRM
, Ta = 25
o
C
V
R
= 4V, f = 1.0 MHz
Junction to ambient (NOTE 2)
Junction to lead (NOTE 2)
-
-
-
-
0.03
115
70
22
0.15
-
-
-
o
mA
pF
C/W
C/W
Thermal resistance
R
th(JL)
NOTES : (1) Pulse test width PW=300usec , 1% duty cycle.
(2) Mounted on P.C. board with 0.2 x 0.2"(5.0 x5.0mm) copper pad areas.
(3) The objective specification for product development.
o
REV. 0
2009/06
ZOWIE
FIG.1 - FORWARD CURRENT DERATING CURVE
2.0
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
SSCD203PSH
(30V / 2.0A)
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
60
PEAK FORWARD SURGE CURRENT,
AMPERES
8.3ms Single Half Sine-Wave
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED ON
0.2X0.2"(5.0X5.0mm)
COPPER PAD AREAS
50
40
30
20
1.0
10
0
0
0
25
50
75
100
125
o
150
175
1
10
NUMBER OF CYCLES AT 60Hz
100
LEAD TEMPERATURE, C
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10.00
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
INSTANTANEOUS REVERSE CURRENT,
MILLIAMPERES
10
1.00
1.0
T
J
=100 C
o
0.10
0.10
0.01
T
J
=25 C
o
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
.001
0
20
40
60
80
100
120
140
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
400
JUNCTION CAPACITANCE, pF
TJ = 25 C
f=1.0MHz
Vsig=50mVP-P
o
100
10
.1
1.0
10
100
REVERSE VOLTAGE, VOLTS
REV. 0
2009/06
Renesas Electronics MCUs
京公网安备 11010802033920号
EEWORLD
