SUGC10DH THRU SUGC10KH
SURFACE MOUNT GLASS PASSIVATED JUNCTION ULTRAFAST EFFICIENT RECTIFIER
Reverse Voltage - 200 to 800 Volts
Forward Current - 1.0 Ampere
ENTED
PAT
0.067 (1.70)
0.059 (1.50)
0.059 (1.50)
1206-S
* Equivalent to SOD87, GL1M , SOD123
FEATURES
0.138 (3.50)
0.130 (3.30)
0.002 (0.05)
0)
(0.4
016
R0.
0.035 (0.90)
0.020 (0.50)
0.035 (0.90)
0.020 (0.50)
*
*
*
*
*
*
*
*
*
*
*
Halogen-free type
Lead free product, compliance to RoHs
Leadless chip form, no lead damage
Lead-free solder Joint, No Wire bond & Lead Frame
Low profile package
For surface mounted applications
Built-in strain relief
Low power loss, High efficiency
High current capability
High surge capacity
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
0.046(1.16)
0.029(0.76)
MECHANICAL DATA
Case :
Packed with FRP substrate and epoxy underilled
Terminals :
Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, Method 2026.
Polarity :
Cathode Band, Laser marking
Weight :
0.012 gram
*Dimensions in inches and (millimeters)
TM
TM
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature
SYMBOLS
unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current (SEE FIG.1)
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage at
1.0
A
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Operating junction and storage temperature range
T
A
=25 C
T
A
=125 C
o
o
o
SUGC10DH
200
140
200
SUGC10GH
400
280
400
SUGC10JH
600
420
600
SUGC10KH
800
560
800
UNITS
Volts
Volts
Volts
Amps
V
RRM
V
RMS
V
DC
I
(AV)
1.0
I
FSM
15
Amps
V
F
0.96
1.30
5
1.70
2.50
Volts
I
R
50
35
10
-65 to +175
uA
trr
C
J
T
J
,T
STG
nS
pF
o
C
NOTES : (1) Reverse recovery test condition : IF 0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Preliminary draft.
Zowie Technology Corporation
REV. 0
RATINGS AND CHARACTERISTIC CURVES SUGC10DH THRU SUGC10KH
FIG.1 - FORWARD CURRENT DERATING CURVE
1.0
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
PEAK FORWARD SURGE CURRENT,
AMPERES
RESISTIVE OR
INDUCTIVE LOAD
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
20
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0.8
15
0.6
10
0.4
5
0.2
0
0
50
75
100
125
o
0
150
175
1
10
NUMBER OF CYCLES AT 60Hz
100
LEAD TEMPERATURE, C
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10.00
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE LEAKAGE
CURRENT, MICROAMPERES
T
J
=150 C
o
1.00
10
T
J
=125 C
o
0.10
1
0.01
0.2
0.4
0.8
1.2
1.6
SUGC10DH
SUGC10GH
SUGC10JH
SUGC10KH
T
J
=25 C
o
0.1
2.0
2.4 2.5
0
20
40
60
80
100
110
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
200
JUNCTION CAPACITANCE, pF
100
60
40
20
T
J
=25 C
o
10
6
4
2
1
.1
.2
.4
1.0
2
4
10
20
40
100
REVERSE VOLTAGE, VOLTS
REV. 0
Zowie Technology Corporation
Microcontroller MCU
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