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BU2523

Description
Silicon Diffused Power Transistor
File Size47KB,6 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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BU2523 Overview

Silicon Diffused Power Transistor

Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2523AF
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of HDTV receivers and pc monitors.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
5.5
0.15
MAX.
1500
800
11
29
45
5.0
-
0.3
UNIT
V
V
A
A
W
V
A
µs
T
hs
25 ˚C
I
C
= 5.5 A; I
B
= 1.1 A
f = 64 kHz
I
Csat
= 5.5 A; f = 64 kHz
PINNING - SOT199
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c
b
1
2
3
case isolated
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
11
29
7
10
175
7
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
average over any 20 ms period
T
hs
25 ˚C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
35
MAX.
2.8
-
UNIT
K/W
K/W
1
Turn-off current.
September 1997
1
Rev 1.100

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