SSM3J13T
TOSHIBA Field Effect Transistor
Silicon P Channel MOS Type (U-MOSII)
SSM3J13T
Power Management Switch
High Speed Switching Applications
•
•
•
Small Package
Low on Resistance : R
on
= 70 mΩ (max) (@V
GS
=
−4
V)
: R
on
= 95 mΩ (max) (@V
GS
=
−2.5
V)
Low Gate Threshold Voltage
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
DC
Drain current
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
(Note 2)
P
D
(Note 1)
T
ch
T
stg
Rating
−12
±8
−3.0
−6.0
1.25
150
−55~150
A
Unit
V
V
Drain power dissipation
Channel temperature
Storage temperature range
W
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
2-3S1A
Note:
Weight: 10 mg (typ.)
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
2
(25.4 mm
×
25.4 mm
×
1.6 t, Cu pad: 645 mm , t
=
10 s)
Note 2: The pulse width limited by max channel temperature.
Marking
3
Equivalent Circuit
3
KDH
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance R
th (ch-a)
and the drain power dissipation P
D
vary according to
the board material, board area, board thickness and pad area, and are also affected by the environment in
which the product is used. When using this device, please take heat dissipation fully into account
1
2007-11-01
SSM3J13T
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Drain-Source breakdown voltage
Drain Cut-off current
Gate threshold voltage
Forward transfer admittance
Symbol
I
GSS
V
(BR) DSS
V
(BR) DSX
I
DSS
V
th
|Y
fs
|
Test Condition
V
GS
= ±8
V, V
DS
=
0
I
D
= −1
mA, V
GS
=
0
I
D
= −1
mA, V
GS
=
8 V
V
DS
= −12
V, V
GS
=
0
V
DS
= −3
V, I
D
= −0.1
mA
V
DS
= −3
V, I
D
= −1.5
A
I
D
= −1.5
A, V
GS
= −4
V
Drain-Source ON resistance
R
DS (ON)
I
D
= −1.5
A, V
GS
= −2.5
V
I
D
= −1.5
A, V
GS
= −2.0
V
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
C
iss
C
rss
C
oss
t
on
t
off
(Note 3)
(Note 3)
(Note 3)
(Note 3)
Min
⎯
−12
−4
⎯
−0.45
3.8
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
Max
±1
⎯
⎯
−1
−1.1
⎯
70
95
180
⎯
⎯
⎯
⎯
⎯
pF
pF
pF
ns
mΩ
Unit
μA
V
V
μA
V
S
⎯
50
70
90
890
203
288
48
120
V
DS
= −10
V, V
GS
=
0, f
=
1 MHz
V
DS
= −10
V, V
GS
=
0, f
=
1 MHz
V
DS
= −10
V, V
GS
=
0, f
=
1 MHz
V
DD
= −10
V, I
D
= −1
A
V
GS
=
0~−2.5 V, R
G
=
4.7
Ω
Note 3: Pulse test
Switching Time Test Circuit
(a) Test circuit
0
−2.5
V
10
μs
OUT
V
DD
= −10
V
R
G
=
4.7
Ω
D.U.
<
1%
=
V
IN
: t
r
, t
f
<
5 ns
COMMON SOURCE
Ta
=
25°C
(b) V
IN
0V
10%
90%
IN
R
G
−2.5
V
V
DS (ON)
90%
10%
t
r
t
on
(c) V
OUT
V
DD
V
DD
t
f
t
off
Precaution
V
th
can be expressed as voltage between gate and source when low operating current value is I
D
= −100 μA
for this product. For normal switching operation, V
GS (on)
requires higher voltage than V
th
and V
GS (off)
requires lower voltage than V
th
.
(relationship can be established as follows: V
GS (off)
<
V
th
<
V
GS (on)
)
Please take this into consideration for using the device.
2
2007-11-01
SSM3J13T
I
D
– V
DS
−4
−4
V
−2.5
V
−3
−2.0
V
−1.8
V
−1.6
V
−10000
Common Source
Ta
=
25°C
−1000
Common Source
VDS
= −3
V
I
D
– V
GS
(mA)
(A)
75°C
−100
Ta
=
25°C
Drain current ID
Drain current ID
−1.5
V
−2
−1.4
V
−1
VGS
= −1.2
V
0
0
−10
−25°C
−1
−0.1
−0.5
−1
−1.5
−2
−0.01
0
−0.5
−1
−1.5
−2
Drain-Source voltage
VDS
(V)
Gate-Source voltage
VGS (V)
R
DS (ON)
–I
D
250
Common Source
Ta
=
25°C
200
400
500
R
DS (ON)
– V
GS
Common Source
ID
= −1.5
A
Ta
=
25°C
Drain-Source on resistance
RDS (ON) (mΩ)
150
VGS
= −2
V
−2.5
V
50
−4
V
Drain-Source on resistance
RDS (ON) (mΩ)
−6
300
100
200
100
0
0
−2
−4
0
0
−2
−4
−6
−8
Drain current ID (A)
Gate-Source voltage
VGS (V)
R
DS (ON)
– Ta
160
Common
140 Source
120
100
80
60
40
20
0
−25
0.1
−0.01
−2.5
V
−4
V
ID
= −1.5
A
VGS
= −2
V
100
|Y
fs
|
– I
D
Common Source
VDS
= −3
V
Ta
=
25°C
10
Forward transfer admittance
|Y
fs
|
(S)
Drain-Source on resistance
RDS (ON) (mΩ)
1
0
25
50
75
100
125
150
−0.1
−1
−10
Ambient temperature Ta (°C)
Drain current ID (A)
3
2007-11-01
MCU
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