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MADP-042905-13060

Description
SILICON, PIN DIODE
Categorysemiconductor    Discrete semiconductor   
File Size128KB,4 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Download Datasheet View All

MADP-042905-13060 Overview

SILICON, PIN DIODE

MADP-042XX5-13060 Series
SURMOUNT
TM
PIN Diodes:
RoHS
Features
Surface Mount
No Wirebonds Required
Rugged Silicon-Glass Construction
Silicon Nitride Passivation
Polymer Scratch Protection
Low Parasitic Capacitance and Inductance
High Average and Peak Power Handling
RoHS Compliant
M/A-COM Products
Rev. V5
Description
This device is a silicon, glass PIN diode surmount chip
fabricated with M/A-COM’s patented HMIC
TM
process.
This device features two silicon pedestals embedded in a
low loss, low dispersion glass. The diode is formed on the
top of one pedestal and connections to the backside of the
device are facilitated by making the pedestal sidewalls
electrically conductive. Selective backside metallization is
applied producing a surface mount device. This vertical
topology provides for exceptional heat transfer. The
topside is fully encapsulated with silicon nitride and has an
additional polymer layer for scratch and impact protection.
These protective coatings prevent damage to the junction
and the anode air-bridge during handling and assembly.
Applications
These packageless devices are suitable for moderate
incident power applications,
10W/C.W. or where the
peak power is
50W, pulse width is
1μS, and duty cycle
is
0.01%. Their low parasitic inductance, 0.4 nH, and
excellent RC constant
,
make these devices a superior
choice for higher frequency switch elements when
compared to their plastic package counterparts.
G
D
E
F
DIM
A
B
C
D
E
F
G
INCHES
MIN
0.040
0.021
0.004
0.013
0.011
0.013
0.019
MM
MIN
1.025
0.525
0.102
0.325
0.275
0.325
0.475
MAX
0.042
0.023
0.008
0.015
0.013
0.015
0.021
MAX
1.075
0.575
0.203
0.375
0.325
0.375
0.525
Absolute Maximum Ratings
1
@ T
AMB
= +25°C
(unless otherwise specified)
Parameter
MADP-042…-13060
C.W. Incident Power dBm
Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Junction Temperature
Mounting Temperature
Absolute Maximum
305
40
405
44
505
43
905
35
Notes:
1. Backside metal: 0.1
μM
thick.
2. Yellow hatched areas indicate backside ohmic gold contacts.
3. All devices have the same outline dimensions ( A to G).
250 mA
-80 V
-55°C to +125°C
-55°C to +150°C
+175°C
+280°C for 10 seconds
1. Exceeding these limits may cause permanent damage.
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
North America
Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
measurements. Commitment to develop is not guaranteed.
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
Visit www.macom.com for additional data sheets and product information.
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
volume is not guaranteed.
information contained herein without notice.
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