MS7201-A2
PRESSURE SENSOR DIE (0-1 BAR)
FOR HARSH ENVIRONMENT
•
•
•
•
•
•
0 to 100 kPa range (1 bar or 14.5 PSI)
Uncompensated absolute pressure sensor die
Piezoresistive silicon micromachined sensor
Hermetic sensor, temperature up to 150°
C
Pads on one side
RoHS-compatible & Pb-free
1
DESCRIPTION
The MS7201-A2 is an absolute silicon micro-machined pressure sensor for harsh environment, with the pads on
one side. A vacuum reference cavity is sealed on top of the sensitive silicon membrane by the anodic bonding of
a glass cap. The pressure, applied on the backside, is converted in electrical signal by piezo-resistors implanted
in the silicon membrane. To improve the sensor stability, a drilled glass is bonded on the backside. As the
pressure port consists of glass and silicon, both stable in most of the chemicals, the MS7201-A2 is suitable for
media-resistive applications.
FEATURES
•
•
•
Media resistive pressure sensor die
Typical output Span 110mV @ 5 V
Temperature range -40°
…+150°
C
•
•
•
Linearity 0.15% (typical)
Die size 1.35 x 1.79 mm
2
Low cost, high reliability & stability
APPLICATION
•
•
Harsh environments
Absolute pressure sensor systems
ELECTRICAL CONNECTIONS
Pin
1
2
3
4
5
Symbol
EPI / I diode (-)
Vs+ / I diode (+)
Out+
GND
Out-
Description
Epi contact / Cathode of diode (n)
Supply voltage / Anode of diode (p)
Positive output*
Ground
Negative output*
*Positive output for pressure applied backside
1
The European RoHS directive 2002/95/EC (Restriction of the use of certain Hazardous Substances in electrical and electronic equipment)
bans the use of lead, mercury, cadmium, hexavalent chromium and polybrominated biphenyls (PBB) or polybrominated diphenyl ethers
(PBDE).
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PAD OUT
Important remarks:
The epitaxial layer is not connected to the Vs+ pin on the
die; this is to allow temperature measurement with the
diode. The epi contact and the cathode of the diode have
the same electrical potential. To avoid bias effects, diode
and bridge cannot be used simultaneously.
As the sensing elements are diffused resistances, the
voltage applied on the ground pads (GND) and on the
supply voltage (Vs+) have to be lower or equal than the
voltage applied on the epi contact (EPI). For better stability it
is good to define the potential of the EPI.
LAYOUT
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FULL SCALE PRESSURE
kPa
100
bar
1
mbar
1000
PSI
14.5
atm
0.9870
mm Hg
750.06
m H
2
O
10
Inches H
2
O
401
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply voltage, bridge
Supply current diode
Storage temperature
Pressure overload
Symbol
Vs+
I diode (+)
T
S
Ta = 25 C
-40
o
Conditions
Min
Max
12
100
+150
5
Unit
V
µA
o
C
Bar
ELECTRICAL CHARACTERISTICS
(Reference conditions: Supply Voltage VS+ = 5 Vdc; Ambient Temperature Ta = 25° )
C
Parameter
Operating Pressure Range
Operating Temperature Range
Bridge Resistance
Full-scale span (FS)
Zero Pressure Offset
Linearity
Diode forward voltage (V
F
)
Temperature Coefficient of Resistance
Span
Offset
Diode
Pressure Hysteresis
Repeatability
Temperature Hysteresis
Min
0
-40
3.0
85
-40
Typ
Max
1
150
Unit
Bar
°
C
kΩ
mV
mV
% FS
V
1
2
3
2
4
5
6
Notes
3.4
110
0
± 0.15
0.550
3.8
135
40
± 0.3
+ 2700
- 1700
- 80
-0.2
-0.2
-0.15
+ 3100
- 2100
-2.2
+ 3400
- 2400
+ 80
0.2
0.2
0.15
ppm/°
C
ppm/°
C
µV/°
C
mV/°
C
% FS
% FS
% FS
NOTES
1) Deviation at one half full-scale pressure from the least squares best line fit over pressure range (0 to 1 bar).
2) The forward voltage of the diode is measured when driving it with a typical value of 40
µA.
3) Slope of the endpoint straight line from 25° to 60°
C
C.
4) Output deviation at any pressure within the specified range, when this pressure is cycled to and from the
minimum or maximum rated pressure, at 25°
C.
5) Same as 6) after 10 pressure cycles.
6) Maximum difference in offset after one thermal cycle from -40° to +150°
C
C.
TEMPERATURE COMPENSATION
The diode between the piezo diffusion and the epi contact can be used for temperature measurement. The
forward voltage of the diode is measured on I diode (-) when a typical current of 40
µA
fed in I diode (+).
Temperature measurement cannot be done at the same time as pressure sensing due to bias effects.
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PICKING TOOLS
The MS7201 sensors have a topside glass cap (1.11 x 1.35 mm ) and a backside glass (1.79 x 1.35 mm ). The
pick and place tool has to be of a soft material as rubber (Hardness 78-97 Shore A). Its external size must fit the
glass cap. Successful tests were done with some tools of SPT (see SPT drawing and references bellow).
SPT references
External dimension
Internal dimensions
RTR-A2-045x045
TL & TW: 0.045 inch /1.14 mm
∅H:
0.025 inch / 0.63 mm
2
2
WIRE BONDING
The bondable area is 100 x 100
µm
for the EPI pad and 100 x 285
µm
for the other pads. The location of the
bonding pads is close to the top Pyrex glass edge reducing the possible size and angle of the bonding capillary.
Refer to the detail view
D
on the layout for more precision.
2
2
ORDERING INFORMATION
Product Code
MS7201-A2
type
Absolute
Product
1 bar pressure sensor die sawn on b/f
Art.-Nr.
720125021
The MS7201-A2 dice are supplied sawn on blue foil, mounted on plastic rings
FACTORY CONTACTS
Intersema Sensoric SA
Ch. Chapons-des-Prés 11
CH-2022 BEVAIX
SWITZERLAND
Tel. 032 847 9550
Tel. Int. +41 32 847 9550
Telefax +41 32 847 9569
e-mail:
http://www.intersema.ch
NOTICE
Intersema reserves the right to make changes to the products contained in this data sheet in order to improve the design or performance
and to supply the best possible products. Intersema assumes no responsibility for the use of any circuits shown in this data sheet, conveys
no license under any patent or other rights unless otherwise specified in this data sheet, and makes no claim that the circuits are free from
patent infringement. Applications for any devices shown in this data sheet are for illustration only and Intersema makes no claim or
warranty that such applications will be suitable for the use specified without further testing or modification.
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