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TPK15KP17A

Description
Trans Voltage Suppressor Diode, 17V V(RWM), Unidirectional,
CategoryDiscrete semiconductor    diode   
File Size370KB,6 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
Download Datasheet Parametric View All

TPK15KP17A Overview

Trans Voltage Suppressor Diode, 17V V(RWM), Unidirectional,

TPK15KP17A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSangdest Microelectronics (Nanjing) Co., Ltd.
package instructionS-PSSO-G1
Reach Compliance Codecompliant
Maximum breakdown voltage20.9 V
Minimum breakdown voltage18.9 V
Breakdown voltage nominal value19.9 V
Maximum clamping voltage27.6 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeS-PSSO-G1
Maximum non-repetitive peak reverse power dissipation15000 W
Number of components1
Number of terminals1
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage17 V
surface mountYES
technologyAVALANCHE
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
TPK15KPXX
Technical Data
Data Sheet N0174, Rev. D
TPK15KPXX TVS Rectifier
Features
Low profile surface mount
Unidirectional and Bidirectional
Fast response
Suppresses transients up to 15kW @ 10/1000µs
Marking : body marked with TPK15KPXX
This is a Pb − Free Device
Open top for heat dissipation and different connection options
All SMC parts are traceable to the wafer lot
All part are 100% tested: electrical, 1x surge test,
visual inspection
Additional testing can be offered upon request
SPD-4
Schematic & Pin Configuration
Applications
Protection from switching transients and induced RF
Maximum Ratings
@T
A
=25°C unless otherwise specified
Characteristic
Junction and Storage Temperature Range
Thermal Resistance Junction to Ambient (Note 1)
Thermal Resistance Junction to Case
Peak Pulse Power (with 10/1000μs waveform)
(Note 2)
Steady-State Power dissipation
(Note 5)
@T
A
= 25°C
@T
A
= 100°C
Symbol
T
J ,
T
STG
R
θJA
R
θJC
P
PPM
P
D
I
FSM
Value
-55 to +175
50
0.9
15000
2.5 (Note 1)
50 (Note 4)
400.0
Unit
°C
°C/W
°C/W
W
W
A
Peak Forward Surge Current(JEDEC Method)(Note 3)
Note: 1. When mounted on FR4 board with recommended mounting pad(see pad layout).
2. With impulse repetition rate (duty factor) of 0.05% or less.
3. At 8.3ms Single half sine-wave (unidirectional devices only)
4. Case temperature controlled heat sink as specified.
5. See Note 134 for derating when P
PP
also applying steady-state power.
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com

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