EEWORLDEEWORLDEEWORLD

Part Number

Search

DU28120T

Description
RF Power MOSFET Transistor 120W, 2-175MHz, 28V
CategoryDiscrete semiconductor    The transistor   
File Size136KB,3 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Environmental Compliance
Download Datasheet Parametric View All

DU28120T Online Shopping

Suppliers Part Number Price MOQ In stock  
DU28120T - - View Buy Now

DU28120T Overview

RF Power MOSFET Transistor 120W, 2-175MHz, 28V

DU28120T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMACOM
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage65 V
Maximum drain current (Abs) (ID)24 A
Maximum drain current (ID)24 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeO-CRFM-F6
Number of components1
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)270 W
Certification statusNot Qualified
surface mountNO
Terminal formFLAT
Terminal locationRADIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
DU28120T
RF Power MOSFET Transistor
120W, 2-175MHz, 28V
Features
M/A-COM Products
Released;
RoHS Compliant
Package Outline
N-Channel enhancement mode device
DMOS structure
Lower capacitances for broadband operation
High saturated output power
Lower noise figure than bipolar devices
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
Symbol
V
DS
V
GS
I
DS
P
D
T
J
T
STG
θ
JC
Rating
65
20
24
269
200
-55 to +150
0.65
Units
V
V
A
W
°C
°C
°C/W
LETTER
DIM
A
B
MILLIMETERS
MIN
24.64
18.29
21.21
12.60
6.22
3.81
5.33
5.08
3.05
2.29
4.06
6.68
.10
MAX
24.89
18.54
21.97
12.85
6.48
4.06
5.59
5.33
3.30
2.54
4.57
7.49
.15
INCHES
MIN
.970
.720
.835
.496
.245
.150
.210
.200
.120
.90
.160
.263
.004
MAX
.980
.730
.865
.506
.255
.160
.220
.210
.130
.100
.180
.295
.006
TYPICAL DEVICE IMPEDANCE
F (MHz)
30
50
100
Z
IN
(Ω)
4.0 - j8.0
1.0 - j2.5
1.0 - j0.5
Z
LOAD
(Ω)
3.4 + j2.4
2.2 +j1.3
2.2 + j0.0
C
D
E
F
G
H
J
K
L
M
N
V
DD
= 28V, I
DQ
= 600mA, P
OUT
= 120 W
Z
IN
is the series equivalent input impedance of the device
from gate to source.
Z
LOAD
is the optimum series equivalent load impedance as
measured from drain to ground.
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
BV
DSS
I
DSS
I
GSS
V
GS(TH)
G
M
C
ISS
C
OSS
C
RSS
G
P
Min
65
-
-
2.0
3.0
-
-
-
13
60
-
Max
-
6.0
6.0
6.0
-
270
240
48
-
-
30:1
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
-
Test Conditions
V
GS
= 0.0 V , I
DS
= 3.0 mA
V
GS
= 28.0 V , V
GS
= 0.0 V
V
GS
= 20.0 V , V
DS
= 0.0 V
V
DS
= 10.0 V , I
DS
= 600.0 mA
V
DS
= 10.0 V , I
DS
= 6000.0 mA ,
Δ
V
GS
= 1.0V, 80
μs
Pulse
V
DS
= 28.0 V , F = 1.0 MHz
V
DS
= 28.0 V , F = 1.0 MHz
V
DS
= 28.0 V , F = 1.0 MHz
V
DD
= 28.0 V, I
DQ
= 600 mA, P
OUT
= 120.0 W F =175 MHz
V
DD
= 28.0 V, I
DQ
= 600 mA, P
OUT
= 120.0 W F =175 MHz
V
DD
= 28.0 V, I
DQ
= 600 mA, P
OUT
= 120.0 W F =175 MHz
ŋ
D
VSWR-T
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
SparkRoad Serial Communication
Serial communication is a commonly used low-speed communication interface. It is also used more frequently during debugging. First, implement the serial port. UART serial communication requires two si...
冒险武者 Domestic Chip Exchange
EE Special Recommendation: Wireless to Enable the Internet of Things~~
[size=5] [url=https://www.eeworld.com.cn/zt/wireless/][size=5]>>Special Topic: Wireless to Control the Internet of Things[/size][/url][/size] [url=https://www.eeworld.com.cn/zt/wireless/][/url] EE edi...
soso RF/Wirelessly
How to download Android SDK
I've been working on Android these days, but I can't download the SDK. Finally I found a good website. Share it with you [url]http://zhangge.net/4586.html[/url]...
247153481 Embedded System
How does the WINCE5.0 USB driver determine the length of device extension information?
The data structure defined by the usb core driver under LINUX has a word end to save the length of the extended information, for example: /* host-side wrapper for one interface setting's parsed descri...
jinwen39325568 Embedded System
R7F0C802x Easy Start -- Programming Thinking + Information Sharing
[i=s]This post was last edited by youki12345 on 2015-7-24 16:40[/i] [size=3] I have been using R7F0C802x for two days and have written several programs. Since I have never used Renesas chips before, I...
youki12345 Renesas Electronics MCUs
Question + How can I repair my digital ammeter?
I have a digital ammeter. It had a problem three months ago. The situation is as follows: AC 220V power supply. Some of the main chips are as follows: ICL7650S chopper-stabilized high-precision operat...
mylsf Test/Measurement

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2175  2079  1624  157  588  44  42  33  4  12 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号