DU28120V
RF Power MOSFET Transistor
120W, 2-175MHz, 28V
Features
M/A-COM Products
Released;
RoHS Compliant
Package Outline
•
•
•
•
•
N-Channel enhancement mode device
DMOS structure
Lower capacitances for broadband operation
High saturated output power
Lower noise figure than bipolar devices
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
Symbol
V
DS
V
GS
I
DS
P
D
T
J
T
STG
θ
JC
Rating
65
20
12
250
200
-55 to +150
0.7
Units
V
V
A
W
°C
°C
°C/W
TYPICAL DEVICE IMPEDANCE
F (MHz)
30
50
100
Z
IN
(Ω)
3.0 - j12.5
1.5 - j8.5
1.0 - j6.0
Z
LOAD
(Ω)
8.0 + j6.0
7.0 +j6.5
6.5 + j5.0
Z
IN
is the series equivalent input impedance of the device
from gate to source.
Z
LOAD
is the optimum series equivalent load impedance as
measured from drain to ground.
V
DD
= 28V, I
DQ
= 600mA, P
OUT
= 120 W
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Return Loss
Load Mismatch Tolerance
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
G
M
C
ISS
C
OSS
C
RSS
G
P
ŋ
D
R
L
VSWR-T
Min
65
-
-
2.0
3.0
-
-
-
13
60
10
-
Max
-
6.0
6.0
6.0
-
270
240
48
-
-
-
30:1
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
%
-
Test Conditions
V
GS
= 0.0 V , I
DS
= 3.0 mA
V
GS
= 28.0 V , V
GS
= 0.0 V
V
GS
= 20.0 V , V
DS
= 0.0 V
V
DS
= 10.0 V , I
DS
= 600.0 mA
V
DS
= 10.0 V , I
DS
= 6000.0 mA ,
Δ
V
GS
= 1.0V, 80
μs
Pulse
V
DS
= 28.0 V , F = 1.0 MHz
V
DS
= 28.0 V , F = 1.0 MHz
V
DS
= 28.0 V , F = 1.0 MHz
V
DD
= 28.0 V, I
DQ
= 600 mA, P
OUT
= 120.0 W F =175 MHz
V
DD
= 28.0 V, I
DQ
= 600 mA, P
OUT
= 120.0 W F =175 MHz
V
DD
= 28.0 V, I
DQ
= 600 mA, P
OUT
= 120.0 W F =175 MHz
V
DD
= 28.0 V, I
DQ
= 600 mA, P
OUT
= 120.0 W F =175 MHz
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
DU28120V
RF Power MOSFET Transistor
120W, 2-175MHz, 28V
Typical Broadband Performance Curves
GAIN
VS
FREQUENCY
V
DD
=28 V I
DQ
=600 mA P
OUT
=120 W
EFFICIENCY
VS
FREQUENCY
V
DD
=28 V I
DQ
=600 mA P
OUT
=120 W
M/A-COM Products
Released;
RoHS Compliant
25
70
65
60
55
50
20
GAIN (dB)
15
10
0
50
150
200
EFFICIENCY (%)
0
25
50
100
150
175
200
FREQUENCY (MHz)
FREQUENCY (MHz)
140
POWER OUTPUT (W)
120
100
80
60
40
POWER OUTPUT
VS
POWER INPUT
V
DD
=28 V I
DQ
=600 mA
POWER OUTPUT (W)
30MHz
175MHz
140
120
100
80
60
40
20
POWER OUTPUT
VS
SUPPLY VOLTAGE
F=175 MHz I
DQ
=600 mA P
IN
=3.0 W
100MHz
20
0.1 0.2 0.3
1
2
3
4
5
6
7
8
9
16
POWER INPUT (W)
20
25
SUPPLY VOLTAGE (V)
30
33
2
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
DU28120V
RF Power MOSFET Transistor
120W, 2-175MHz, 28V
TEST FIXTURE SCHEMATIC
M/A-COM Products
Released;
RoHS Compliant
TEST FIXTURE ASSEMBLY
3
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
京公网安备 11010802033920号
EEWORLD
