EEWORLDEEWORLDEEWORLD

Part Number

Search

DU2840S

Description
RF Power MOSFET Transistor 40W, 2-175MHz, 28V
CategoryDiscrete semiconductor    The transistor   
File Size156KB,3 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Environmental Compliance
Download Datasheet Parametric View All

DU2840S Online Shopping

Suppliers Part Number Price MOQ In stock  
DU2840S - - View Buy Now

DU2840S Overview

RF Power MOSFET Transistor 40W, 2-175MHz, 28V

DU2840S Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMACOM
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage65 V
Maximum drain current (Abs) (ID)8 A
Maximum drain current (ID)8 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeO-CRFM-F4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)125 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationRADIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
DU2840S
RF Power MOSFET Transistor
40W, 2-175MHz, 28V
Features
M/A-COM Products
Released;
RoHS Compliant
Package Outline
N-Channel enhancement mode device
DMOS structure
Lower capacitances for broadband operation
High saturated output power
Lower noise figure than bipolar devices
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
Symbol
V
DS
V
GS
I
DS
P
D
T
J
T
STG
θ
JC
Rating
65
20
8
125
200
-55 to +150
1.4
Units
V
V
A
W
°C
°C
°C/W
TYPICAL DEVICE IMPEDANCE
F (MHz)
30
50
100
200
Z
IN
(Ω)
12.0 - j6.8
10.0 - j6.5
6.0 - j5.5
1.1 - j3.0
Z
LOAD
(Ω)
6.5 - j1.5
6.0 - j1.8
5.5 - j1.8
3.5 - j1.8
LETTER
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
MIN
24.64
18.29
20.07
9.47
6.22
5.64
2.92
2.29
4.04
6.58
.10
MAX
24.89
18.54
20.83
9.73
6.48
5.79
3.30
2.67
4.55
7.39
.15
INCHES
MIN
.970
.720
.790
.373
.245
.222
.115
.090
.159
.259
.004
MAX
.980
.730
.820
.383
.255
.228
.130
.105
.179
.291
.006
V
DD
= 28V, I
DQ
= 200mA, P
OUT
= 40 W
Z
IN
is the series equivalent input impedance of the device
from gate to source.
Z
LOAD
is the optimum series equivalent load impedance as
measured from drain to ground.
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
G
M
C
ISS
C
OSS
C
RSS
G
P
ŋ
D
VSWR-T
Min
65
-
-
2.0
1
-
-
-
13
60
-
Max
-
2.0
2.0
6.0
-
90
80
16
-
-
30:1
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
-
L
Test Conditions
V
GS
= 0.0 V , I
DS
= 10.0 mA
V
GS
= 28.0 V , V
GS
= 0.0 V
V
GS
= 20.0 V , V
DS
= 0.0 V
V
DS
= 10.0 V , I
DS
= 200.0 mA
V
DS
= 10.0 V , I
DS
= 2000.0 mA ,
Δ
V
GS
= 1.0V, 80
μs
Pulse
V
DS
= 28.0 V , F = 1.0 MHz
V
DS
= 28.0 V , F = 1.0 MHz
V
DS
= 28.0 V , F = 1.0 MHz
V
DD
= 28.0 V, I
DQ
= 200 mA, P
OUT
= 40 W F =175 MHz
V
DD
= 28.0 V, I
DQ
= 200 mA, P
OUT
= 40 W F =175 MHz
V
DD
= 28.0 V, I
DQ
= 200 mA, P
OUT
= 40 W F =175 MHz
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
Why does the EXTI9_5 interrupt keep stopping?
Use STM32F103 and its GPIOE2, 3, 4, 5 and 6 ports as keyboard input. The initialization program is: /* Configure EXTI line */ EXTI->EMR = 0x7C; //Interrupt MASK bit of line 2,3,4,5,6 EXTI->IMR = 0x7C;...
dontium stm32/stm8
Request study materials
Request study materials...
zzjluck PCB Design
Printed circuit board design standards
[b]1. IEC printed board design standards[/b]The earliest IEC printed board design standards were 60326-3 "Design and Use of Printed Boards" published in 1980, and the 1991 version of IEC60326-3 "Desig...
程序天使 PCB Design
Altium Designer v20.1.10.176
[hide]https://ypojie.pipipan.com/dir/17401394-32057813-893144/[/hide]...
dcexpert PCB Design
How to make a good pcb......
How to make a good pcb.........
破茧佼龙 MCU
Looking for hardware experts in Shenzhen to cooperate in product development (embedded handheld devices)!!!
I want to make an ARM handheld device, similar to MID. I am looking for hardware experts in Shenzhen to cooperate in developing products (embedded handheld devices)!!! The cooperation method is negoti...
jiqimao Embedded System

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 281  568  2702  1496  2065  6  12  55  31  42 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号