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DU2880U

Description
RF Power MOSFET Transistor 80W, 2-175MHz, 28V
CategoryDiscrete semiconductor    The transistor   
File Size147KB,3 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Environmental Compliance
Download Datasheet Parametric View All

DU2880U Overview

RF Power MOSFET Transistor 80W, 2-175MHz, 28V

DU2880U Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMACOM
package instructionFLANGE MOUNT, O-CRFM-F4
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage65 V
Maximum drain current (Abs) (ID)16 A
Maximum drain current (ID)16 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeO-CRFM-F4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)207 W
Certification statusNot Qualified
surface mountNO
Terminal formFLAT
Terminal locationRADIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
DU2880U
RF Power MOSFET Transistor
80W, 2-175MHz, 28V
Features
M/A-COM Products
Released;
RoHS Compliant
Package Outline
N-Channel enhancement mode device
DMOS structure
Lower capacitances for broadband operation
High saturated output power
Lower noise figure than bipolar devices
Parameter
Symbol
V
DS
V
GS
I
DS
P
D
T
J
T
STG
θ
JC
Rating
65
20
16
206
200
-65 to +150
0.85
Units
V
V
A
W
°C
°C
°C/W
ABSOLUTE MAXIMUM RATINGS AT 25° C
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
TYPICAL DEVICE IMPEDANCE
F (MHz)
30
50
100
175
Z
IN
(Ω)
5.4 - j4.4
2.5 - j4.4
1.6 - j3.4
0.7 - j1.2
Z
LOAD
(Ω)
5.7 +j4.7
3.4 + j3.5
2.4 + j2.4
1.7 + j0.8
LETTER
DIM
A
B
C
D
E
MILLIMETERS
MIN
24.64
18.29
25.91
12.60
6.22
5.59
3.05
2.21
3.91
6.53
.10
MAX
24.89
18.54
26.42
12.85
6.48
5.84
3.30
2.59
4.42
7.34
.15
INCHES
MIN
.970
.720
1.020
.496
.245
.220
.120
.087
.154
.257
.004
MAX
.980
.730
1.040
.506
.255
.230
.130
.102
.174
.289
.006
V
DD
= 28V, I
DQ
= 400mA, P
OUT
= 80 W
Z
IN
is the series equivalent input impedance of the device
from gate to source.
Z
LOAD
is the optimum series equivalent load impedance as
measured from drain to ground.
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
G
M
C
ISS
C
OSS
C
RSS
G
P
ŋ
D
VSWR-T
Min
65
-
-
2.0
2.0
-
-
-
13
60
-
Max
-
4.0
4.0
6.0
-
180
160
32
-
-
30:1
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
-
F
G
H
J
K
L
Test Conditions
V
GS
= 0.0 V , I
DS
= 20.0 mA
V
GS
= 28.0 V , V
GS
= 0.0 V
V
GS
= 20.0 V , V
DS
= 0.0 V
V
DS
= 10.0 V , I
DS
= 400.0 mA
V
DS
= 10.0 V , I
DS
= 4.0 A ,
Δ
V
GS
= 1.0V, 80
μs
Pulse
V
DS
= 28.0 V , F = 1.0 MHz
V
DS
= 28.0 V , F = 1.0 MHz
V
DS
= 28.0 V , F = 1.0 MHz
V
DD
= 28.0 V, I
DQ
= 400 mA, P
OUT
= 80.0 W F =175 MHz
V
DD
= 28.0 V, I
DQ
= 400 mA, P
OUT
= 80.0 W F =175 MHz
V
DD
= 28.0 V, I
DQ
= 400 mA, P
OUT
= 80.0 W F =175 MHz
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
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