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AS4SD8M16DG-75/XT

Description
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
Categorystorage   
File Size7MB,51 Pages
ManufacturerAUSTIN
Websitehttp://www.austinsemiconductor.com/
Download Datasheet Parametric Compare View All

AS4SD8M16DG-75/XT Overview

8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54

AS4SD8M16DG-75/XT Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals54
Maximum operating temperature125 Cel
Minimum operating temperature-55 Cel
Maximum supply/operating voltage3.6 V
Minimum supply/operating voltage3 V
Rated supply voltage3.3 V
Processing package description0.400 INCH, PLASTIC, TSOP2-54
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
CraftsmanshipCMOS
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE, THIN PROFILE
surface mountYes
Terminal formGULL WING
Terminal spacing0.8000 mm
terminal coatingGOLD
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
Temperature levelMILITARY
memory width16
organize8M X 16
storage density1.34E8 deg
operating modeSYNCHRONOUS
Number of digits8.39E6 words
Number of digits8M
Access methodFOUR BANK PAGE BURST
Memory IC typeSYNCHRONOUS DRAM
Number of ports1
Minimum access time5.4 ns
SDRAM
Austin Semiconductor, Inc.
128 Mb: 8 Meg x 16 SDRAM
Synchronous DRAM Memory
FEATURES
• Full Military temp (-55°C to 125°C) processing avail-
able
• Configuration: 8 Meg x 16 (2 Meg x 16 x 4 banks)
• Fully synchronous; all signals registered on positive
edge of system clock
• Internal pipelined operation; column address can be
changed every clock cycle
• Internal banks for hiding row access/precharge
• Programmable burst lengths: 1, 2, 4, 8 or full page
• Auto Precharge, includes CONCURRENT AUTO
PRECHARGE and Auto Refresh Modes
• Self Refresh Mode (IT)
• 64ms, 4,096-cycle refresh (IT)
• <24ms 4,096 cycle recfresh (XT)
• WRITE Recovery (t
WR
= “2 CLK”)
• LVTTL-compatible inputs and outputs
• Single +3.3V ±0.3V power supply
V
DD
DQ0
V
DD
Q
DQ1
DQ2
V
SS
Q
DQ3
DQ4
V
DD
Q
DQ5
DQ6
V
SS
Q
DQ7
V
DD
DQML
WE\
CAS\
RAS\
CS\
BA0
BA1
A10
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
V
SS
DQ15
V
SS
Q
DQ14
DQ13
V
DD
Q
DQ12
DQ11
V
SS
Q
DQ10
DQ9
V
DD
Q
DQ8
V
SS
NC
DQMH
CLK
CKE
NC
A11
A9
A8
A7
A6
A5
A4
Vss
AS4SD8M16
PIN ASSIGNMENT
(Top View)
54-Pin TSOP
OPTIONS
• Plastic Package - OCPL*
54-pin TSOP (400 mil)
MARKING
DG
No. 901
Timing (Cycle Time)
7.5ns @ CL = 3 (PC133) or
7.5ns @ CL = 2 (PC100)
-75
A0
A1
A2
A3
V
DD
Operating Temperature Ranges
-Industrial Temp (-40°C to 85° C)
IT
-Industrial Plus Temp
(-45°C to +105°C)
ET
-Military Temp (-55°C to 125°C)
XT***
KEY TIMING PARAMETERS
SPEED
CLOCK
ACCESS TIME
GRADE FREQUENCY CL = 2** CL = 3**
-75
133 MHz
5.4ns
-75
100 MHz
6ns
*Off-center parting line
**CL = CAS (READ) latency
***Consult Factory
SETUP
TIME
1.5ns
1.5ns
HOLD
TIME
0.8ns
0.8ns
8 Meg x 16
Configuration
2 Meg x 16 x 4 banks
Refresh Count
4K
Row Addressing
4K (A0-A11)
Bank Addressing
4 (BA0, BA1)
Column Addressing
512 (A0-A8)
Note: “\” indicates an active low.
For more products and information
please visit our web site at
www.austinsemiconductor.com
AS4SD8M16
Rev. 0.5 04/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1

AS4SD8M16DG-75/XT Related Products

AS4SD8M16DG-75/XT AS4SD8M16 AS4SD8M16DG-75/ET AS4SD8M16DG-75/IT
Description 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
Number of functions 1 1 1 1
Number of terminals 54 54 54 54
Maximum operating temperature 125 Cel 85 Cel 85 Cel 85 Cel
Minimum operating temperature -55 Cel -40 Cel -40 Cel -40 Cel
Maximum supply/operating voltage 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply/operating voltage 3 V 3 V 3 V 3 V
Rated supply voltage 3.3 V 3.3 V 3.3 V 3.3 V
Processing package description 0.400 INCH, PLASTIC, TSOP2-54 0.400 INCH, PLASTIC, TSOP2-54 0.400 INCH, PLASTIC, TSOP2-54 0.400 INCH, PLASTIC, TSOP2-54
state ACTIVE ACTIVE ACTIVE ACTIVE
Craftsmanship CMOS CMOS CMOS CMOS
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
surface mount Yes Yes Yes Yes
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal spacing 0.8000 mm 0.8000 mm 0.8000 mm 0.8000 mm
terminal coating GOLD PALLADIUM GOLD PALLADIUM GOLD PALLADIUM GOLD
Terminal location DUAL DUAL DUAL DUAL
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Temperature level MILITARY INDUSTRIAL INDUSTRIAL INDUSTRIAL
memory width 16 16 16 16
organize 8M X 16 8M X 16 8M X 16 8M X 16
storage density 1.34E8 deg 1.34E8 deg 1.34E8 deg 1.34E8 deg
operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Access method FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Memory IC type SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM
Number of ports 1 1 1 1
Minimum access time 5.4 ns 5.4 ns 5.4 ns 5.4 ns
Number of digits 8M 8M 8M 8M
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