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1N6168

Description
Trans Voltage Suppressor Diode, 1500W, 91.2V V(RWM), Bidirectional, 1 Element, Silicon,
CategoryDiscrete semiconductor    diode   
File Size267KB,3 Pages
ManufacturerBkc Semiconductors Inc.
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Trans Voltage Suppressor Diode, 1500W, 91.2V V(RWM), Bidirectional, 1 Element, Silicon,

1N6168 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerBkc Semiconductors Inc.
Reach Compliance Codeunknown
Other featuresTEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
Minimum breakdown voltage102.6 V
Breakdown voltage nominal value120 V
Shell connectionISOLATED
Maximum clamping voltage181.545 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-LALF-W2
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityBIDIRECTIONAL
Maximum power dissipation5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage91.2 V
Maximum reverse current5 µA
surface mountNO
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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