1N626 datasheet, PDF - EEWORLD Datasheet

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1N626: DescriptionRectifier Diode, 1 Element, 0.4A, 50V V(RRM), Silicon, DO-35, DO-35, 2 PIN; CategoryDiscrete semiconductor diode; File Size37KB，1 Pages; ManufacturerBkc Semiconductors Inc.

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1N626 Overview

Rectifier Diode, 1 Element, 0.4A, 50V V(RRM), Silicon, DO-35, DO-35, 2 PIN

1N626 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Bkc Semiconductors Inc.
package instruction	DO-35, 2 PIN
Reach Compliance Code	unknown
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.5 V
JEDEC-95 code	DO-35
JESD-30 code	O-XALF-W2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Maximum output current	0.4 A
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	LONG FORM
Maximum power dissipation	0.5 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	50 V
Maximum reverse recovery time	1 µs
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	AXIAL

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1N626 Related Products

	1N626	1N625	1N627	1N628	1N629
Description	Rectifier Diode, 1 Element, 0.4A, 50V V(RRM), Silicon, DO-35, DO-35, 2 PIN	Rectifier Diode, 1 Element, 0.4A, 30V V(RRM), Silicon, DO-35, DO-35, 2 PIN	Rectifier Diode, 1 Element, 0.4A, 100V V(RRM), Silicon, DO-35, DO-35, 2 PIN	Rectifier Diode, 1 Element, 0.4A, 150V V(RRM), Silicon, DO-35, DO-35, 2 PIN	Rectifier Diode, 1 Element, 0.4A, 200V V(RRM), Silicon, DO-35, DO-35, 2 PIN
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Bkc Semiconductors Inc.	Bkc Semiconductors Inc.	Bkc Semiconductors Inc.	Bkc Semiconductors Inc.	Bkc Semiconductors Inc.
package instruction	DO-35, 2 PIN	DO-35, 2 PIN	DO-35, 2 PIN	DO-35, 2 PIN	DO-35, 2 PIN
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V
JEDEC-95 code	DO-35	DO-35	DO-35	DO-35	DO-35
JESD-30 code	O-XALF-W2	O-XALF-W2	O-XALF-W2	O-XALF-W2	O-XALF-W2
JESD-609 code	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1
Number of terminals	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Maximum output current	0.4 A	0.4 A	0.4 A	0.4 A	0.4 A
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum power dissipation	0.5 W	0.5 W	0.5 W	0.5 W	0.5 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	50 V	30 V	100 V	150 V	200 V
Maximum reverse recovery time	1 µs	1 µs	1 µs	1 µs	1 µs
surface mount	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL

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