Certificate TH97/10561QM
Certificate TW00/17276EM
1N4148WS
PRV : 100 Volts
I
O
: 150 mA
FEATURES :
* Silicon Epitaxial Planar Diode
* Fast switching diodes.
* Pb / RoHS Free
SMALL SIGNAL
FAST SWITCHING DIODE
SOD-323
0.40
0.25
0.15 (max)
2.80
2.30
1.80
1.60
MECHANICAL DATA :
* Case : SOD-323 plastic Case
* Weight : approx. 0.004 g
* Marking Code : " W2"
1.10
0.80
1.35
1.15
Dimensions in millimeters
MAXIMUM RATINGS AND
THERMAL
CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Parameter
Reverse Voltage
Peak Reverse Voltage
Average Rectified Current Half Wave
Rectification with Resistive Load at f
≥
50 Hz
Surge Forward Current at t < 1 s and Tj = 25 °C
Power Dissipation at T
amb
= 25 °C
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
Symbol
V
R
V
RM
I
F(AV)
I
FSM
P
tot
R
thJA
Tj
T
STG
25 °C unless otherwise specified)
Value
75
100
150
1)
Unit
V
V
mA
mA
mW
°C/W
°C
°C
350
200
650
1)
150
-65 to + 150
1)
ELECTRICAL CHARACTERISTICS
(Rating at Ta =
Parameter
Forward Voltage
Leakage Current
Test Conditions
I
F
= 10 mA
V
R
= 20 V
V
R
= 75 V
V
R
= 20 V, Tj =150 °C
V
F
= V
R
= 0 V
t
p
= 0.1µs, Rise Time < 30ns,
f
p
= 5 to 100 kHz
I
F
= 10 mA, I
R
= 1 mA,
V
R
= 6 V, R
L
= 100
Ω
f = 100 MHz, V
RF
= 2 V
Symbol
V
F
I
R
I
R
I
R
C
tot
V
fr
Trr
η
v
Min.
-
-
-
-
-
-
-
0.45
Typ.
-
-
-
-
-
-
-
-
Max.
1.0
25
5.0
50
4
2.5
4
-
Unit
V
nA
µA
µA
pF
V
ns
-
Capacitance
Voltage Rise when Switching On
(tested with 50 mA pulses)
Reverse Recovery Time
Rectification Efficiency
Note :
(1) Valid provided that electrodes are kept at ambient temperature.
Page 1 of 3
Rev. 06 : May 22, 2006
Certificate TH97/10561QM
Certificate TW00/17276EM
RATINGS AND CHARACTERISTIC CURVES (1N4148WS)
Forward charecteristics
mA
10
3
V
10
4
5
Dynamic forward resistance
versus forward current
2
10
2
T
j
= 25
°C
f = 1 kHz
T
j
= 100
°C
T
j
= 25
°C
10
3
5
i
F
10
r
F
2
10
2
5
1
2
10
10
-1
5
2
10
-2
0
1
2V
1
10
-2
10
-1
1
10
10
2
mA
V
F
I
F
Admissible power dissipation
versus ambient temperture
For conditions, see footnote in table
"Absolute Maximum Ratings"
mW
1000
900
800
Relative capacitance
versus reverse voltage
C
tot
(V
R
)
1.1
C
tot
(0 V)
1.0
T
j
= 25
°C
f = 1 kHz
P
tot
700
600
500
400
300
200
100
0
0
100
1N4148W
1N4148
0.9
0.8
0.7
T
amb
200
°C
0
2
4
6
V
R
8
10 V
Page 2 of 3
Rev. 06 : May 22, 2006
Certificate TH97/10561QM
Certificate TW00/17276EM
RATINGS AND CHARACTERISTIC CURVES (1N4148WS)
Leakage Current
versus junction temperature
nA
10
4
5
2
10
3
I
R
5
2
10
2
5
2
10
5
V
R
= 20 V
2
1
0
100
200
°C
T
j
Admissible repetitive peak forward current versus pulse duration
For conditions, see footnote in table " Absolute Maximum Ratings "
A
100
I
5
4
3
½=
t
p
/T
I
FRM
T= 1/f
p
I
FRM
2
t
p
10
5
4
3
2
n= 0
T
t
0.1
0.2
1
5
4
3
2
0.5
0.1
10
-5
2
5
10
-4
2
5
10
-3
2
5
10
-2
2
5
10
-1
2
5
1
2
5
10 s
t
p
Page 3 of 3
Rev. 06 : May 22, 2006
Embedded System
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