InGaAs PIN photodiodes
G12182 series
Long wavelength type
(cutoff wavelength: 2.05 to 2.1
μm)
Features
Cutoff wavelength: 2.05 to 2.1
μm
Low cost
Photosensitive area:
φ
0.3 to
φ
3 mm
Low noise
High sensitivity
High reliability
High-speed response
Applications
Optical power meters
Gas analyzers
Moisture meters
NIR (near infrared) photometry
Options
Amplifier for InGaAs PIN photodiode
Heatsink for one-stage TE-cooled type
Heatsink for two-stage TE-cooled type
Temperature controller for TE-cooled type
C4159-03
A3179
A3179-01
C1103-04
Structure / Absolute maximum ratings
Dimensional
outline
Package
/Window
material*
1
Absolute maximum ratings
Photosensitive Thermister TE-cooler TE-cooler Reverse Operating
Storage
area
Cooling
power
allowable allowable voltage temperature temperature
Soldering
dissipation current
Topr
voltage
Tstg
V
R
max
conditions
(mm)
(mW)
(A)
(V)
(V)
(°C)
(°C)
φ
0.3
φ
0.5
Non-
-
-
-
-40 to +85*
2
-55 to +125*
2
φ
1
cooled
φ
2
φ
3
φ
0.3
φ
0.5
260 °C or
One-stage
1.5
1.0
1
less,
φ
1
TE-cooled
within 10 s
φ
2
Type no.
G12182-003K
(1)/B
TO-18
G12182-005K
G12182-010K
G12182-020K
(2)/B
TO-5
G12182-030K
G12182-103K
G12182-105K
G12182-110K
(3)/B
TO-8
G12182-120K
G12182-130K
φ
3
-40 to +70*
2
-55 to +85*
2
0.2
G12182-203K
φ
0.3
G12182-205K
φ
0.5
Two-stage
G12182-210K
1.0
1.2
(4)/B
TO-8
φ
1
TE-cooled
G12182-220K
φ
2
G12182-230K
φ
3
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
*1:
B=Borosilicate glass
*2:
No condensation
The G12182 series may be destroyed or deteriorated by electrostatic discharge, etc. Be carefull when using the G12182 series.
www.hamamatsu.com
1
InGaAs PIN photodiodes
G12182 series
Electrical and optical characteristics (Typ., unless otherwise noted)
Cutoff
Terminal
Peak
Shunt
Dark
Photo
Detectivity
frequency capacitance
Spectral sensi-
resistance
sensitivity current
Temp.
Ct
D
*
fc
response tivity
S
Rsh
I
D
coefficient
λ=λp
V
R
=0 V
range wave-
V
R
=0 V
Element
λ=λp
V
R
=0.5 V of I
D
V
R
=10 mV
R
L
=50
Ω
f=1 MHz
length
λ
temperature
V
R
=0.5 V
λp
Min. Typ. Typ. Max.
Min. Typ. Typ. Max. Min. Typ. Min. Typ.
(°C)
(μm) (μm) (A/W) (A/W) (nA) (nA)
(MHz) (MHz) (pF) (pF) (MΩ) (MΩ) (cm·Hz
1/2
/W) (cm·Hz
1/2
/W)
10 100
40
90
25
50 0.65
3
20 200
15
35
70 150 0.2
1
25
0.9 to 2.1
100 1000
5
10 230 500 0.05 0.25 1 × 10
11
3.5 × 10
11
500 5000
1.2 2.5 1000 2000 0.01 0.05
1000 10000
1
1.5 2000 3000 0.004 0.02
1
10
40 140 22
50
10
50
3
30
15
50
64 150 2.8
14
-10
0.9 to 2.07 1.95 1 1.2 10 100 1.07
5
16 200 500 0.6
3 5 × 10
11
1.5 × 10
12
50 500
1.2 3.5 900 2000 0.13 0.65
100 1000
1
1.8 1800 3000 0.055 0.28
0.5
5
40 150 20
50
20 100
1.5 15
15
53
60 150 5.5
28
-20
0.9 to 2.05
5
50
5
17 195 500 1.4
7 7 × 10
11
2 × 10
12
25 250
1.2 3.7 850 2000 0.28 1.4
50 500
1
1.9 1700 3000 0.11 0.55
Measurement
Condition
Noize
equivalent power
NEP
λ=λp
Typ.
(W/Hz
1/2
)
6.5 × 10
-14
1.5 × 10
-13
2.5 × 10
-13
5.5 × 10
-13
8.5 × 10
-13
1.5 × 10
-14
3 × 10
-14
5.5 × 10
-14
1.5 × 10
-13
2 × 10
-13
1 × 10
-14
2 × 10
-14
4 × 10
-14
9 × 10
-14
1.5 × 10
-13
Max.
(W/Hz
1/2
)
2 × 10
-13
3.5 × 10
-13
6.5 × 10
-13
1.5 × 10
-12
2.5 × 10
-12
4.5 × 10
-14
8 × 10
-14
1.5 × 10
-13
4 × 10-
13
5.5 × 10-
13
3 × 10
-14
5.5 × 10-
14
1 × 10
-13
2.5 × 10-
13
4 × 10
-13
Type no.
G12182-003K
G12182-005K
G12182-010K
G12182-020K
G12182-030K
G12182-103K
G12182-105K
G12182-110K
G12182-120K
G12182-130K
G12182-203K
G12182-205K
G12182-210K
G12182-220K
G12182-230K
Spectral response
Photosensitivity temperature coefficient (%/°C)
1.4
1.2
Td=25 ˚C
Td=-10 ˚C
Td=-20 ˚C
(Typ. V
R
=0 V)
Photosensitivity temperature characteristics
(Typ.)
2
Photosensitivity (A/W)
1.0
0.8
0.6
0.4
0.2
0
0.8
1
0
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-1
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
Wavelength (μm)
KIRDB0487EC
Wavelength (μm)
KIRDB0207EA
2
InGaAs PIN photodiodes
G12182 series
Linearity (G12182-010K)
102
100
98
(Typ. Ta=25 °C,
λ=1.3
μm, R
L
=2
Ω,
V
R
=0 V)
Relative sensitivity (%)
96
94
92
90
88
86
84
82
80
0
2
4
6
8
10
Incident light level (mW)
KIRDB0537EA
Dark current vs. reverse voltage
Non-cooled type
10 μA
(Typ. Ta=25
°C
)
1 μA
G12182-130K (Td=-10 °C)
G12182-030K
TE-cooled type
(Typ.)
G12182-230K (Td=-20 °C)
G12182-020K
G12182-010K
100 nA
1 μA
Dark current
100 nA
G12182-005K
Dark current
G12182-120K (Td=-10 °C)
G12182-220K (Td=-20 °C)
10 nA
G12182-110K (Td=-10 °C)
G12182-210K (Td=-20 °C)
G12182-105K (Td=-10 °C)
10 nA
G12182-003K
1 nA
G12182-205K (Td=-20 °C)
G12182-103K (Td=-10 °C)
G12182-203K (Td=-20 °C)
1 nA
0.01
0.1
1
10
100 pA
0.01
0.1
1
10
Reverse voltage (V)
KIRDB0488EA
Reverse voltage (V)
KIRDB0530EA
3
InGaAs PIN photodiodes
G12182 series
Terminal capacitance vs. reverse voltage
10 nF
(Typ. Ta=25 °C, f=1 MHz)
Shunt resistance vs. element temperature
1 GΩ
G12182-003K/-103K/-203K
100 MΩ
10 MΩ
(Typ. V
R
=10 mV)
G12182-030K/-130K/-230K
1 nF
G12182-005K/-105K/-205K
G12182-010K/-110K/-210K
Terminal capacitance
G12182-020K/-120K/-220K
100 pF
G12182-010K/-110K/-210K
Shunt resistance
1 MΩ
100 kΩ
10 kΩ
10 pF
G12182-005K/-105K/-205K
G12182-020K/-120K/-220K
1 kΩ
G12182-030K/-130K/-230K
-20
0
20
40
60
80
100
G12182-003K/-103K/-203K
1 pF
0.001
0.01
0.1
1
10
100
Ω
-40
Reverse voltage
KIRDB0489EB
Element temperature (°C)
KIRDB0490EB
The operating temperature for one-stage and
two-stage TE-cooled types is up to 70 °C.
Thermistor temperature characteristics
10
6
Cooling characteristics of TE-cooler
40
(Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W)
(Typ.)
Element temperature (°C)
20
One-stage
TE-cooled type
0
Resistance (Ω)
10
5
-20
10
4
-40
Two-stage
TE-cooled type
10
3
-40
-30
-20
-10
0
10
20
30
-60
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Element temperature (
°
C)
KIRDB0116EA
Current (A)
KIRDB0231EA
4
InGaAs PIN photodiodes
G12182 series
Current vs. voltage (TE-cooler)
1.6
1.4
1.2
One-stage
TE-cooled type
(Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W)
Current (A)
1.0
0.8
0.6
0.4
0.2
0
Two-stage
TE-cooled type
0
0.2
0.4
0.6
0.8
1.0
1.2
Voltage (V)
KIRDB0115EB
Dimensional outlines (unit: mm)
G12182-003K/-005K/-010K
5.4 ± 0.2
4.7 ± 0.1
0.15 max.
0.1 max.
2.6 ± 0.2
Window
3.0 ± 0.1
3.6 ± 0.2
G12182-020K/-030K
9.2 ± 0.2
8.1 ± 0.1
2.5 ± 0.2
0.4 max.
4.2 ± 0.2
18 min.
Window
5.9 ± 0.1
13 min.
Photosensitive
surface
0.45
Lead
2.54 ± 0.2
Photosensitive
surface
0.45
Lead
5.1 ± 0.3
1.5 max.
Case
Case
Distance from photosensitive
area center to cap center
-0.2≤X≤+0.2
-0.2≤Y≤+0.2
KIRDA0220EA
Distance from photosensitive
area center to cap center
-0.2≤X≤+0.2
-0.2≤Y≤+0.2
KIRDA0221EA
5
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