NTE5673 thru NTE5677
TRIAC – 15 Amp
Description:
The NTE5673 through NTE5677 series of meduim power TRIACs are bidirectional triode thyristors
which may be switched from off–state to conduction for either polarity od applied voltage with positive
or negative gate triggering. These devices are designed for control of AC loads in applications such
as lighting, heating, and motor speed control as well as static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage and peak Reverse Voltage (T
J
= +100°C), V
DRM
, V
RRM
NTE5673 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5675 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5676 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
NTE5677 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
On–State Current RMS (T
C
= +75°C, 360° Conduction), I
T(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Peak Surge (Non–Repetitive) On–State Current (One Full Cycle, 50 or 60Hz), I
TSM
. . . . . . . . 150A
Peak Gate–Power Dissipation (I
GT
≤
I
GTM
for 3µs Max), P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Average Gate–Power Dissipation, P
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Peak Gate–Trigger Current (3µs Max), I
GTM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Operating Junction Temperature Range (T
J
), T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8°C/W
Electrical Characteristics:
(T
C
= +25°C unless otherwise specified)
Parameter
Peak Off–State Current
(I
r
= 100A Peak)
Maximum On–State Voltage
(I
r
= 100A Peak)
DC Gate Trigger Current
(Main Terminal Voltage = 24V, R
L
= 12Ω)
MT
2
(+), G (+); MT
2
(–), G (–) Quads I – III
MT
2
(+), G (–); MT
2
(–), G (+) Quads II – IV
DC Gate Trigger Voltage
(Main Terminal Voltage = 24V, R
L
= 12Ω)
DC Holding Current
(Gate Open)
Gate Controlled Turn–On Time
(V
D
= V
DROM
, I
T
= 10A Peak, I
GT
= 300mA, t
r
= 0.1µs)
Critical Rate–of–Rise of Off–State Voltage
(V
D
= V
DROM
, T
C
= +100°C, Gate Open)
Critical Rate–of–Rise of Commutation
(V
D
= V
DROM
, I
f
= I
T(RMS)
, T
C
= +100°C, Gate Open)
Symbol
I
DROM
–
V
T
–
I
GT
–
–
V
GT
–
I
H
–
t
gt
–
Critical
dv/dt
Commutating
dv/dt
–
–
3.0
40
5
–
V/µs
–
V/µs
–
–
60
µs
–
2.5
mA
–
–
50
80
V
–
2.2
mA
–
2
V
Min
Typ
Max Unit
mA
Embedded System
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