HMC1087
v03.0414
8 WATT GaN MMIC POWER AMPLIFIER,
2 - 20 GHz
The information provided in this document is for a product controlled by the International Traffic in Arms Regulations
(ITAR). This product cannot be shipped outside of the United States without a U.S. Department of State export license.
Typical Applications
Features
High Psat: +39 dBm
Power Gain at Psat: +5.5 dB
High Output IP3: +44 dBm
Small Signal Gain: 11 dB
Supply Voltage: +28 V @ 850 mA
50 Ohm Matched Input/Output
Die Size: 2 x 4 x 0.1 mm
AMPLIFIERS - LINEAR & POWER - CHIP
The HMC1087 is ideal for:
• Test Instrumentation
• General Communications
• Radar
Functional Diagram
General Description
The HMC1087 is an 8W Gallium Nitride (GaN) MMIC
Power Amplifier which operates between 2 and 20
GHz. The amplifier typically provides 11dB of small
signal gain, +39 dBm of saturated output power, and
+44 dBm output IP3 at +29 dBm output power per tone.
The HMC1087 draws 850 mA quiescent current from
a +28V DC supply. The RF I/Os are matched to 50
Ohms for ease of integration into Multi-Chip-Modules
(MCMs). All electrical performance data was acquired
with the die eutectically attached to 1.02 mm (40 mil)
thick CuMo carrier with multiple 1.0 mil diameter ball
bonds connecting the die to 50 Ohm transmission
lines on alumina.
Electrical Specifications, Tc = +25°C, Vdd = +28 V, Idd = 850 mA
[1
]
Parameter
Frequency Range
Small Signal Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 3 dB Compression (P3dB)
Power Gain for 3 dB compression (P3dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Power Added Efficiency
Quiescent Supply Current (Idd @ Vdd = 28V)
[2
]
Min.
Typ.
2-6
Max.
Min.
Typ.
6 - 18
Max.
Min.
Typ.
18 - 20
Max.
Units
GHz
dB
dB
dB/ °C
dB
dB
dBm
dB
dBm
dBm
%
mA
10
11
±0.5
0.012
8
10
38
8.5
39
44
24
850
10
12
±1.0
0.016
8
12
38
8.5
40
44
22
850
10
12
±0.5
0.024
15
12
38
8
39
43.5
20
850
[1] Assumes eutectic attach of die to a 40mil CuMo carrier, and 25°C is maintained at the back of the carrie
[2] Measurement taken at Pout / tone = +29 dBm
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1087
v03.0414
8 WATT GaN MMIC POWER AMPLIFIER,
2 - 20 GHz
The information provided in this document is for a product controlled by the International Traffic in Arms Regulations
(ITAR). This product cannot be shipped outside of the United States without a U.S. Department of State export license.
20
10
RESPONSE (dB)
0
GAIN (dB)
-10
-20
-30
-40
2
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
S21
S11
S22
20
18
16
14
12
10
8
6
4
2
0
2
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
+25C
+85C
-40C
Input Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
Output Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
-35
-40
-10
-15
-20
-25
-30
-35
-40
2
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
+25C
+85C
-40C
2
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
+25C
+85C
-40C
Gain vs. Bias
20
18
16
14
12
10
8
6
4
2
0
2
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
24V @ 425 mA
28V @ 425 mA
32V @ 425 mA
24V @ 850 mA
28V @ 850 mA
32V @ 850 mA
P3dB vs. Frequency
45
40
POUT (dBm)
GAIN (dB)
35
30
25
2
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
P3dB
Psat
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - CHIP
2
Gain and Return Loss
Gain vs. Temperature
HMC1087
v03.0414
8 WATT GaN MMIC POWER AMPLIFIER,
2 - 20 GHz
The information provided in this document is for a product controlled by the International Traffic in Arms Regulations
(ITAR). This product cannot be shipped outside of the United States without a U.S. Department of State export license.
AMPLIFIERS - LINEAR & POWER - CHIP
Power Gain vs. Frequency
20
18
16
POWER GAIN (dB)
Power Added Efficiency vs. Pin
40
35
30
14
12
10
8
6
4
2
0
2
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
Linear
P3dB
Psat
2 GHz
4 GHz
6 GHz
P.A.E. (%)
25
20
15
10
5
0
0
3
6
9
12
15
18
21
24
27
30
33
PIN (dBm)
8 GHz
10 GHz
12 GHz
14 GHz
16 GHz
18 GHz
Pout vs. Pin
45
40
35
POUT (dBm)
30
25
20
15
10
0
3
6
9
2 GHz
4 GHz
6 GHz
8 GHz
10 GHz
P3dB vs. Temperature
45
40
P3dB (dBm)
35
30
25
12
15 18 21
PIN (dBm)
24
27
30
12 GHz
14 GHz
16 GHz
18 GHz
Linear
33
2
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
+25C
+85C
-40C
P3dB vs. DC Bias
45
Psat vs. Temperature
45
40
PSAT (dBm)
2
4
6
8
10
12
14
16
18
20
P3dB (dBm)
40
35
35
30
30
25
FREQUENCY (GHz)
24V @ 425 mA
28V @ 425 mA
32V @ 425 mA
24V @ 850 mA
28V @ 850 mA
32V @ 850 mA
25
2
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
+25C
+85C
-40C
3
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1087
v03.0414
8 WATT GaN MMIC POWER AMPLIFIER,
2 - 20 GHz
The information provided in this document is for a product controlled by the International Traffic in Arms Regulations
(ITAR). This product cannot be shipped outside of the United States without a U.S. Department of State export license.
45
1.4
1.2
40
PSAT (dBm)
IDS (A)
1
0.8
0.6
0.4
0.2
35
30
25
2
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
24V @ 425 mA
28V @ 425 mA
32V @ 425 mA
24V @ 850 mA
28V @ 850 mA
32V @ 850 mA
0
0
3
6
9
12
15
18
21
24
27
30
33
PIN (dBm)
2 GHz
6 GHz
10 GHz
14 GHz
18 GHz
OIP3 vs. Frequency
60
55
50
IP3 (dBm)
IM3 vs. Pout/Tone
80
60
IM3 (dBc)
45
40
35
30
25
20
2
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
Pout= 11dBm/Tone
Pout= 29 dBm/Tone
40
20
0
12
14
16
18
20
22
24
26
28
30
32
34
36
38
POUT/TONE (dBm)
2 GHz
6 GHz
10 GHz
14 GHz
18 GHz
Reverse Isolation vs. Temperature
0
REVERSE ISOLATION (dB)
-10
Power Dissipation vs. Pin
40
35
30
PDISS (W)
-20
25
20
15
10
5
-30
-40
-50
2
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
0
0
3
6
9
12
15
18
21
24
27
30
33
PIN (dBm)
2 GHz
6 GHz
10 GHz
14 GHz
18 GHz
+25C
+85C
-40C
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - CHIP
4
Psat vs. DC Bias
IDS vs. Pin
HMC1087
v03.0414
8 WATT GaN MMIC POWER AMPLIFIER,
2 - 20 GHz
The information provided in this document is for a product controlled by the International Traffic in Arms Regulations
(ITAR). This product cannot be shipped outside of the United States without a U.S. Department of State export license.
AMPLIFIERS - LINEAR & POWER - CHIP
Second Harmonic
100
SECOND HARMONIC (dBc)
80
60
40
20
0
12
14
16
18
20
22
24
26
28
30
32
34
36
38
POUT (dBm)
2 GHz
6 GHz
5
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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