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PBSS4612PA_15

Description
12 V, 6 A NPN low VCEsat (BISS) transistor
File Size153KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet View All

PBSS4612PA_15 Overview

12 V, 6 A NPN low VCEsat (BISS) transistor

PBSS4612PA
12 V, 6 A NPN low V
CEsat
(BISS) transistor
Rev. 01 — 7 May 2010
Product data sheet
1. Product profile
1.1 General description
NPN low V
CEsat
Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra
thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
PNP complement: PBSS5612PA.
1.2 Features and benefits
Low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Exposed heat sink for excellent thermal and electrical conductivity
Leadless small SMD plastic package with medium power capability
1.3 Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
I
CM
R
CEsat
[1]
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
single pulse;
t
p
1 ms
I
C
= 6 A;
I
B
= 300 mA
[1]
Conditions
open base
Min
-
-
-
-
Typ
-
-
-
33
Max
12
6
7
46
Unit
V
A
A
Pulse test: t
p
300
μs; δ ≤
0.02.
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