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ASI10742

Description
NPN SILICON RF POWER TRANSISTOR
File Size12KB,1 Pages
ManufacturerASI [ASI Semiconductor, Inc]
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ASI10742 Overview

NPN SILICON RF POWER TRANSISTOR

VMB10-12S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI VMB10-12S
is Designed for
PACKAGE STYLE .380 4L STUD
.112x45°
A
FEATURES:
Omnigold™
Metalization System
B
ØC
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
CES
V
EBO
P
DISS
T
J
T
STG
θ
JC
O
O
D
H
I
J
2.0 A
#8-32 UNC-2A
G
F
E
36 V
18 V
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
36 V
4.0 V
20 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +150 C
5.0
O
C/W
O
O
O
A
B
C
D
E
F
G
H
I
J
.220 / 5.59
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.450 / 11.43
.090 / 2.29
.155 / 3.94
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
ORDER CODE: ASI10742
O
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CBO
h
FE
C
OB
P
G
η
C
I
C
= 15 mA
I
C
= 50 mA
T
C
= 25 C
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
18
36
4.0
1.0
UNITS
V
V
V
mA
---
pF
dB
I
E
= 2.5 mA
V
CB
= 12.5 V
V
CE
= 5.0 V
V
CB
= 12.5 V
V
CC
= 12.5 V
P
OUT
= 10 W
I
C
= 250 mA
f = 1.0 MHz
f = 88 MHz
5.0
200
65
13
60
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1

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