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MTI145WX100GD-SMD

Description
Power Field-Effect Transistor, 190A I(D), 100V, 0.0022ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOPLUS-DIL, 24 PIN
CategoryDiscrete semiconductor    The transistor   
File Size443KB,7 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Environmental Compliance
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MTI145WX100GD-SMD Overview

Power Field-Effect Transistor, 190A I(D), 100V, 0.0022ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOPLUS-DIL, 24 PIN

MTI145WX100GD-SMD Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLittelfuse
package instructionSMALL OUTLINE, R-PDSO-G24
Reach Compliance Codenot_compliant
Shell connectionISOLATED
Configuration3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)190 A
Maximum drain-source on-resistance0.0022 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G24
JESD-609 codee3
Number of components6
Number of terminals24
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
surface mountYES
Terminal surfaceTIN OVER NICKEL
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
MTI145WX100GD
Three phase full Bridge
with Trench MOSFETs
in DCB-isolated high-current package
V
DSS
= 100 V
I
D25
= 190 A
R
DSon typ.
= 1.7 mW
Part number
MTI145WX100GD
L1+
G1
G3
L2+
G5
L3+
Surface Mount Device
S1
S3
S5
L1
L2
L3
G2
G4
G6
S2
S4
L1-
S6
L2-
L3-
Features / Advantages:
• MOSFETs in trench technology:
− low R
DSon
− optimized intrinsic reverse diode
• Package:
− high level of integration
− high current capability
− aux. terminals for MOSFET control
− terminals for soldering or welding
connections
− isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
Applications:
AC drives
• in automobiles
− electric power steering
− starter generator
• in industrial vehicles
− propulsion drives
− fork lift drives
• in battery supplied equipment
Package:
ISOPLUS-DIL
®
High level of integration
RoHS compliant
High current capability
Aux. Terminals
for MOSFET control
• Terminals for soldering or welding
connections
• Space and weight savings
Terms & Conditions of usage
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of
the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly
notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales
office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, test conditions and dimensions.
20170614f
© 2017 IXYS All rights reserved
1-7

MTI145WX100GD-SMD Related Products

MTI145WX100GD-SMD 518023
Description Power Field-Effect Transistor, 190A I(D), 100V, 0.0022ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOPLUS-DIL, 24 PIN Power Field-Effect Transistor, 190A I(D), 100V, 0.0022ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Is it Rohs certified? conform to conform to
Maker Littelfuse Littelfuse
package instruction SMALL OUTLINE, R-PDSO-G24 SMALL OUTLINE, R-PDSO-G24
Reach Compliance Code not_compliant compliant
Shell connection ISOLATED ISOLATED
Configuration 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V 100 V
Maximum drain current (ID) 190 A 190 A
Maximum drain-source on-resistance 0.0022 Ω 0.0022 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G24 R-PDSO-G24
JESD-609 code e3 e3
Number of components 6 6
Number of terminals 24 24
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
surface mount YES YES
Terminal surface TIN OVER NICKEL Tin (Sn) - with Nickel (Ni) barrier
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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