RB495D
Diodes
Schottky barrier diode
RB495D
!
Applications
Low current rectification
!
External dimensions
(Units : mm)
2.9±0.2
1.9±0.2
+0.2
−0.1
0.8±0.1
1.1
1.6
0.4
(All leads have same dimensions)
!
Construction
Silicon epitaxial planar
ROHM : SMD3
EIAJ : SC-59
JEDEC : SOT-346
!
Circuit
!
Absolute maximum ratings
(Ta = 25°C)
Parameter
Peak reverse voltage
DC reverse voltege
Mean rectifying current
∗1
Peak forward surge current
∗2
Junction temperature
Storage temperature
Operating temperture
∗1
Mean output current per element : I
O
/ 2
∗2
60Hz for 1
Symbol
V
RM
V
R
I
O
I
FSM
Tj
Tstg
Topr
Limits
40
25
0.4
2
125
Unit
V
V
A
A
°C
°C
°C
−40~+125
−30~+85
!
Electrical characteristics
(Ta = 25°C)
Parameter
Forward voltage
Reverse current
Symbol
V
F1
V
F2
I
R
Min.
−
−
−
Typ.
−
−
−
Max.
0.30
0.50
70
Unit
V
V
µA
I
F
=10mA
I
F
=200mA
V
R
=25V
Conditions
Note) ESD sensiteve product handling required.
0.3~0.6
D3Q
!
Features
1) Small surface mounting type. (SMD3)
2) Two diodes with common cathode for excellent
installation efficiency.
3) High reliability.
0.95 0.95
+0.2
−0.1
2.8±0.2
0~0.1
+0.1
−0.05
+0.1
0.15
−0.06
RB495D
Diodes
!
Electrical characteristic curves
(Ta = 25°C)
CAPACITANCE BETWEEN TERMINALS : C
T
(pF)
100m
100
1
FORWARD CURRENT : I
F
(A)
REVERSE CURRENT : I
R
(A)
10m
Ta=125°C
1m
100m
=
1
2
°
C
5
°
C
75
25
°
C
Ta
10m
−
40
°
C
75°C
100µ
10
1m
25°C
10µ
100µ
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
1µ
0
10
0°C
20
30
40
1
0
5
10
15
20
25
30
35
FORWARD VOLTAGE : V
F
(V)
REVERSE VOLTAGE : V
R
(V)
REVERSE VOLTAGE : V
R
(V)
Fig.1 Forward characteristics
Fig.2 Reverse characteristics
Fig.3 Capacitance between
terminals characteristics
京公网安备 11010802033920号
EEWORLD
