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HER503G

Description
GLASS PASSIVATED HIGH EFFICIENCY RECTIFIER
File Size56KB,2 Pages
ManufacturerJinan Jing Heng Electronics
Websitehttp://www.jinghenggroup.com/
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HER503G Overview

GLASS PASSIVATED HIGH EFFICIENCY RECTIFIER

R
HER501 G TH R U HER508 G
GLASS PASSIVATED HIGH EFFICIENCY RECTIFIER
Reverse Voltage: 50 to 1000 Volts
Forward Current:5.0Amperes
S E M I C O N D U C T O R
FEATURES
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Low forward voltage drop
High current capability, High reliability
Low power loss, high efficiency
High surge current capability
High speed switching, Low leakage
High temperature soldering guaranteed:260
/10 seconds at terminals
Component in accordance to RoHS 2011
/
65
/
EU
DO-201AD
1.0(25.4)
MIN
0.210(5.3)
0.190(4.8)
DIA
0.375(9.50)
0.285(7.20)
MECHANICAL DATA
Case: JEDEC DO-201AD molded plastic body
Lead: Plated axial leads, solderable per MIL-STD-750,method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.042ounce, 1
.
19 grams
0.052(1.32)
0.045(1.14)
DIA
1.0(25.4)
MIN
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating at 25
ambient temperature unless otherwise specified. Single phase ,half wave ,60H
Z
,resistive or inductive
load. For capacitive load, derate current by 20%.)
Symbols
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
at 5.0 A
Maximum DC Reverse Current
at rated DC blocking voltage
T
A
=25
HER
501G
50
35
50
HER
502G
100
70
100
HER
503G
200
140
200
HER
504G
300
210
300
HER
505G
400
280
400
5.0
HER
506G
600
420
600
HER
507G
800
560
800
HER
508G
1000
700
1000
Units
V
olts
V
olts
V
olts
A
mpS
A
mps
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
170
1.0
1.3
10.0
1
.
7
V
olts
A
T
A
=100
200
Maximum reverse recovery time(Note1)
Typical junction capacitance(Note2)
Operating junction and storage temperature
range
T
rr
C
J
T
J
T
STG
50
75
-55 to+150
75
ns
P
F
°C
Note:
1.Test conditions: I
F=
0.5A,I
R
=1.0A,I
RR
=0.25A.
2.Measured at 1MH
Z
and applied reverse voltage of 4.0 Volts.
JINAN JINGHENG ELECTRONICS CO., LTD.
2
-
1
HTTP
://
WWW.JINGHENGGROUP.COM

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