INCHANGE Semiconductor
isc
Product Specification
isc N-Channel MOSFET Transistor
BUK444-200A
DESCRIPTION
·5.3A,
200V
•
SOA is Power Dissipation Limited
•
Nanosecond Switching Speeds
•
Linear Transfer Characteristics
•
Majority Carrier Device
•
Related Literature
APPLICATIONS
·use
in Switched Mode Power Supplies (SMPS),
motor control,welding, And in general purpose switching
resistance application
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
DSS
V
GS
I
D
P
tot
T
j
T
stg
ARAMETER
Drain-Source Voltage (V
GS
=0)
Gate-Source Voltage
Drain Current-continuous@ TC=37℃
Total Dissipation@TC=25℃
Max. Operating Junction Temperature
Storage Temperature Range
VALUE
200
±30
5.3
25
150
150
UNIT
V
V
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
5
55
UNIT
℃/W
℃/W
isc website：www.iscsemi.cn
1
isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
INCHANGE Semiconductor
isc
Product Specification
isc N-Channel Mosfet Transistor
·ELECTRICAL
CHARACTERISTICS (T
C
=25℃)
SYMBOL
V
(BR)DSS
V
GS(TH)
R
DS(ON)
I
GSS
I
DSS
V
SD
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-stage Resistance
Gate Source Leakage Current
Zero Gate Voltage Drain Current
Diode Forward Voltage
CONDITIONS
V
GS
= 0; I
D
= 0.25mA
V
DS
= V
GS
; I
D
= 1mA
V
GS
= 10V; I
D
= 3.5A
V
GS
=
±30V;V
DS
= 0
V
DS
= 200V; V
GS
= 0
I
F
= 5.3A; V
GS
= 0
BUK444-200A
MIN
200
2.1
MAX
UNIT
V
4
0.4
±100
10
1.3
V
Ω
nA
uA
V
isc website：www.iscsemi.cn
2
isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
京公网安备 11010802033920号
EEWORLD
