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2SD0637

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, M-A1, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size68KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric View All

2SD0637 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, M-A1, 3 PIN

2SD0637 Parametric

Parameter NameAttribute value
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)160
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1
Transistor
2SD0637
(2SD637)
Silicon NPN epitaxial planer type
For low-power general amplification
6.9±0.1
2.5±0.1
1.0
1.0
2.4±0.2 2.0±0.2 3.5±0.1
Unit: mm
I
G
G
G
1.5
Features
High foward current transfer ratio h
FE
.
Low collector to emitter saturation voltage V
CE(sat)
.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
1.5 R0.9
R0.9
0.4
1.0±0.1
R
0.
7
0.85
(Ta=25˚C)
Ratings
60
50
7
200
100
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
1:Base
2:Collector
3:Emitter
2.5
2.5
3
2
1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
EIAJ:SC–71
M Type Mold Package
I
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 20V, I
B
= 0
I
C
= 10µA, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 10V, I
C
= 2mA
I
C
= 100mA, I
B
= 10mA
V
CB
= 10V, I
E
= –2mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
60
50
7
160
0.3
150
3.5
460
0.5
V
MHz
pF
min
typ
max
1
1
Unit
µA
µA
V
V
V
*
h
FE
Rank classification
Q
160 ~ 260
R
210 ~ 340
S
290 ~ 460
h
FE
Rank
Note.) The Part number in the Parenthesis shows conventional part number.
1.25±0.05
I
Absolute Maximum Ratings
0.55±0.1
0.45±0.05
4.1±0.2
4.5±0.1
1

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