1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Reverse Leakage
(V
R
= 10 V)
(V
R
= 20 V)
Forward Voltage
(I
F
= 10 mA)
(I
F
= 100 mA)
(I
F
= 500 mA)
Total Capacitance
(V
R
= 1.0 V, f = 1 MHz)
Reverse Recovery Time
(I
F
= I
R
= 10 mA, I
R
= 1.0 mA)
Symbol
I
R
8.0
75
V
F
255
325
410
CT
Min
Typ
Max
30
Unit
mA
mV
320
390
480
pF
ns
35
12.0
t
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
DC Current
Source
+
−
0.1
mF
t
r
0V
t
p
10%
750
mH
0.1
mF
I
F
V
R
90%
50
W
Output
Pulse
Generator
Pulse Generator
Output
I
F
DUT
t
rr
Adjust for I
RM
R
L
= 50
W
Current
Transformer
50
W
Input
Oscilloscope
1.
2.
3.
4.
5.
I
RM
i
R(REC)
= 1 mA
Output Pulse
(I
F
= I
RM
= 10 mA; measured
at i
R(REC)
= 1 mA)
DC Current Source is adjusted for a Forward Current (I
F
) of 10 mA.
Pulse Generator Output is adjusted for a Peak Reverse Recovery Current I
RM
of 10 mA.
Pulse Generator transition time << t
rr
.
I
R(REC)
is measured at 1 mA. Typically 0.1 X I
RM
or 0.25 X I
RM
.
t
p
» t
rr
Figure 1. Recovery Time Equivalent Test Circuit
www.onsemi.com
2
NSR0520V2, NSVR0520V2
TYPICAL CHARACTERISTICS
1000
I
F
, FORWARD CURRENT (mA)
I
R
, REVERSE CURRENT (mA)
100000
10000
100
1 25°C
10
85°C
1
1000
100
10
25°C
1
0.1
0.01
0.001
0.0001
0
2
4
6
8
10
12
14
16
18
20
−40°C
85°C
1 25°C
25°C
−40°C
0.1
0
0.05 0.1
0.15 0.2
0.25 0.3
0.35 0.4
0.45 0.5
V
F
, FORWARD VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
Figure 2.
60
C
t
, TOTAL CAPACITANCE (pF)
55
50
45
40
35
30
25
20
15
10
0
2
4
6
8
10
12
14
16
18
20
V
R
, REVERSE VOLTAGE (V)
Figure 3.
Figure 4.
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
2
1
STYLE 1
1
2
SOD−523
CASE 502−01
ISSUE E
STYLE 2
−X−
D
−Y−
E
2X
DATE 28 SEP 2010
SCALE 4:1
b
0.08
1
M
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO-
TRUSIONS, OR GATE BURRS.
DIM
A
b
c
D
E
H
E
L
L2
MILLIMETERS
MIN
NOM
MAX
0.50
0.60
0.70
0.25
0.30
0.35
0.07
0.14
0.20
1.10
1.20
1.30
0.70
0.80
0.90
1.50
1.60
1.70
0.30 REF
0.15
0.20
0.25
X Y
TOP VIEW
A
c
H
E
SIDE VIEW
2X
GENERIC
MARKING DIAGRAM*
L
1
STYLE 1
XX
M
XX
XX
2
1
STYLE 2
M
M
2
NO POLARITY
2X
L2
= Specific Device Code
Date Code
BOTTOM VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
0.48
2X
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “
G”,
may or may not be present.
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
STYLE 2:
1.80
0.40
2X
PACKAGE
OUTLINE
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11524D
SOD−523
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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