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5SMX12L1280

Description
Insulated Gate Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size177KB,5 Pages
ManufacturerABB
Websitehttp://www.abb.com/
Download Datasheet Parametric Compare View All

5SMX12L1280 Overview

Insulated Gate Bipolar Transistor,

5SMX12L1280 Parametric

Parameter NameAttribute value
MakerABB
package instruction,
Reach Compliance Codecompliant
V
CE
I
C
=
=
1200 V
100 A
IGBT-Die
5SMX 12L1280
Die size: 12.6 x 12.6 mm
Doc. No. 5SYA1309-03 04 14
Low loss, rugged SPT technology
Smooth switching for good EMC
Large bondable emitter area
Passivation: Silicon Nitride plus Polyimide
Optimized for high DC-link voltage applications
Maximum rated values
Parameter
Collector-emitter voltage
DC collector current
Peak collector current
Gate-emitter voltage
IGBT short circuit SOA
Junction temperature
1)
1)
Symbol Conditions
V
CES
I
C
I
CM
V
GES
t
psc
T
vj
V
CC
= 900 V, V
CEM
1200 V
V
GE
15 V, T
vj
125 °C
Limited by T
vjmax
V
GE
= 0 V, T
vj
25 °C
min
max
1200
100
200
Unit
V
A
A
V
µs
°C
-20
20
10
-40
150
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

5SMX12L1280 Related Products

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Description Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, 12.60 X 12.60 MM, DIE-1
Maker ABB ABB
Reach Compliance Code compliant compliant
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