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1H8-E

Description
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size98KB,1 Pages
ManufacturerRectron Semiconductor
Websitehttp://www.rectron.com/
Download Datasheet Parametric View All

1H8-E Overview

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon

1H8-E Parametric

Parameter NameAttribute value
MakerRectron Semiconductor
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY, LOW POWER LOSS
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
Maximum reverse recovery time0.075 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
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