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UPD44164184BF5-E35Y-EQ3

Description
1MX18 DDR SRAM, 0.45ns, PBGA165, 13 X 15 MM, PLASTIC, BGA-165
Categorystorage    storage   
File Size493KB,33 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

UPD44164184BF5-E35Y-EQ3 Overview

1MX18 DDR SRAM, 0.45ns, PBGA165, 13 X 15 MM, PLASTIC, BGA-165

UPD44164184BF5-E35Y-EQ3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Parts packaging codeBGA
package instruction13 X 15 MM, PLASTIC, BGA-165
Contacts165
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time0.45 ns
Other featuresPIPELINED ARCHITECTURE
Maximum clock frequency (fCLK)287 MHz
I/O typeCOMMON
JESD-30 codeR-PBGA-B165
length15 mm
memory density18874368 bit
Memory IC TypeDDR SRAM
memory width18
Number of functions1
Number of terminals165
word count1048576 words
character code1000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize1MX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Encapsulate equivalent codeBGA165,11X15,40
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
power supply1.5/1.8,1.8 V
Certification statusNot Qualified
Maximum seat height1.46 mm
Maximum standby current0.51 A
Minimum standby current1.7 V
Maximum slew rate0.55 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
width13 mm
Datasheet
μ
PD44164184B
18M-BIT DDR II SRAM
4-WORD BURST OPERATION
Description
The
μ
PD44164184B is a 1,048,576-word by 18-bit synchronous double data rate static RAM fabricated with
advanced CMOS technology using full CMOS six-transistor memory cell.
The
μ
PD44164184B integrate unique synchronous peripheral circuitry and a burst counter. All input
registers controlled by an input clock pair (K and K#) are latched on the positive edge of K and K#.
These products are suitable for application which require synchronous operation, high speed, low voltage,
high density and wide bit configuration.
These products are packaged in 165-pin PLASTIC BGA.
R10DS0015EJ0200
Rev.2.00
October 6, 2011
Features
1.8
±
0.1 V power supply
165-pin PLASTIC BGA (13 x 15)
HSTL interface
PLL circuitry for wide output data valid window and future frequency scaling
Pipelined double data rate operation
Common data input/output bus
Two-tick burst for low DDR transaction size
Two input clocks (K and K#) for precise DDR timing at clock rising edges only
Two output clocks (C and C#) for precise flight time
and clock skew matching-clock and data delivered together to receiving device
Internally self-timed write control
Clock-stop capability. Normal operation is restored in 20
μ
s after clock is resumed.
User programmable impedance output (35 to 70
Ω)
Fast clock cycle time : 3.3 ns (300 MHz), 3.5 ns (287 MHz), 4.0 ns (250 MHz), 5.0 ns (200 MHz)
Simple control logic for easy depth expansion
JTAG 1149.1 compatible test access port
R10DS0015EJ0200 Rev.2.00
October 6, 2011
Page 1 of 32

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