KM41C466P-8 datasheet, PDF - EEWORLD Datasheet

KM41C466P-8: DescriptionStatic Column DRAM, 64KX4, 80ns, CMOS, PDIP18, PLASTIC, DIP-18; Categorystorage storage; File Size56KB，1 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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KM41C466P-8 Overview

Static Column DRAM, 64KX4, 80ns, CMOS, PDIP18, PLASTIC, DIP-18

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	DIP
package instruction	DIP, DIP18,.3
Contacts	18
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	STATIC COLUMN
Maximum access time	80 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	COMMON
JESD-30 code	R-PDIP-T18
JESD-609 code	e0
length	22.96 mm
memory density	262144 bit
Memory IC Type	STATIC COLUMN DRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	18
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64KX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP18,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
refresh cycle	256
Maximum seat height	4.65 mm
Maximum slew rate	0.055 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	7.62 mm

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