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KM41V4000CT-7

Description
Fast Page DRAM, 4MX1, 70ns, CMOS, PDSO20, 0.300 INCH, TSOP2-26/20
Categorystorage    storage   
File Size55KB,1 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

KM41V4000CT-7 Overview

Fast Page DRAM, 4MX1, 70ns, CMOS, PDSO20, 0.300 INCH, TSOP2-26/20

KM41V4000CT-7 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeTSOP
package instructionTSOP2, TSSOP20/26,.36
Contacts20
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE
Maximum access time70 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O typeSEPARATE
JESD-30 codeR-PDSO-G20
JESD-609 codee0
length17.14 mm
memory density4194304 bit
Memory IC TypeFAST PAGE DRAM
memory width1
Number of functions1
Number of ports1
Number of terminals20
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX1
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSSOP20/26,.36
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
refresh cycle1024
Maximum seat height1.2 mm
self refreshNO
Maximum standby current0.0005 A
Maximum slew rate0.055 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width7.62 mm
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