SGL60N90DG3 datasheet, PDF - EEWORLD Datasheet

SGL60N90DG3: DescriptionInsulated Gate Bipolar Transistor, 60A I(C), 900V V(BR)CES, N-Channel, TO-264, TO-264, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size52KB，2 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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SGL60N90DG3 Overview

Insulated Gate Bipolar Transistor, 60A I(C), 900V V(BR)CES, N-Channel, TO-264, TO-264, 3 PIN

Parameter Name	Attribute value
Maker	SAMSUNG
Parts packaging code	TO-264
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknown
Other features	HIGH SPEED SWITCHING
Shell connection	ISOLATED
Maximum collector current (IC)	60 A
Collector-emitter maximum voltage	900 V
Configuration	SINGLE WITH BUILT-IN DIODE
JEDEC-95 code	TO-264
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	450 ns
Nominal on time (ton)	320 ns

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