Ordering number : ENA1396
ATP208
SANYO Semiconductors
DATA SHEET
ATP208
Features
•
•
•
•
•
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Low ON-resistance.
Large current.
Slim package.
4.5V drive.
Halogen free compliance.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
PW≤10μs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
40
±20
90
270
60
150
--55 to +150
155
45
Unit
V
V
A
A
W
°C
°C
mJ
A
Note :
*1
VDD=15V, L=100
μ
H, IAV=45A
*2
L
≤
100
μ
H, Single pulse
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Symbol
V(BR)DSS
IDSS
IGSS
Conditions
ID=1mA, VGS=0V
VDS=40V, VGS=0V
VGS=±16V, VDS=0V
Ratings
min
40
1
±10
typ
max
Unit
V
μA
μA
Marking : ATP208
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
www.semiconductor-sanyo.com/network
11409PA MS IM TC-00001776 No. A1396-1/4
ATP208
Continued from preceding page.
Parameter
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, ID=1mA
VDS=10V, ID=45A
ID=45A, VGS=10V
ID=23A, VGS=4.5V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=20V, VGS=10V, ID=90A
VDS=20V, VGS=10V, ID=90A
VDS=20V, VGS=10V, ID=90A
IS=90A, VGS=0V
Ratings
min
1.5
16
28
4.6
7
4510
535
385
35
400
280
200
83
19
17
1.0
1.2
6.0
9.8
typ
max
2.6
Unit
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Package Dimensions
unit : mm (typ)
7057-001
6.5
0.5
1.5
0.4
4.6
2.6
0.4
4
7.3
1.7
2
0.5
1
0.8
2.3
2.3
3
9.5
0.55
0.7
0.6
4.6
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
Switching Time Test Circuit
10V
0V
VIN
VDD=20V
0.1
VIN
PW=10μs
D.C.≤1%
G
D
ID=45A
RL=0.44Ω
VOUT
ATP208
P.G
50Ω
S
6.05
No. A1396-2/4
ATP208
90
ID -- VDS
V
8.0V
6.0V
80
70
5
4.
V
120
Drain Current, ID -- A
Drain Current, ID -- A
4.0V
60
50
40
30
20
16.0V
100
80
60
40
20
0
VGS=3.5V
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
0.5
1.0
1.5
25
°
10
C
Tc=
75
°
C
--25
°
C
Tc=
--25
°
C
75
°
C
25
°
C
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Tc=25
°
C
140
ID -- VGS
VDS=10V
10.0
Drain-to-Source Voltage, VDS -- V
16
RDS(on) -- VGS
IT14322
14
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
IT14323
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
Tc=25
°
C
Single pulse
Single pulse
12
10
8
6
4
2
0
--60
ID=23A
45A
A
=23
, ID
4.5V
S=
VG
A
=45
, ID
V
10.0
S=
VG
14
16
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
7
|
y
fs
|
-- ID
C
IT14324
3
2
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
Case Temperature, Tc --
°
C
IS -- VSD
IT14325
Forward Transfer Admittance,
|
y
fs
|
-- S
5
3
2
10
7
5
3
2
1.0
VDS=10V
25
°
5
°
C
--2
=
C
Tc
75
°
VGS=0V
Single pulse
Source Current, IS -- A
7
3
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
5 7 100
2
0
0.2
0.4
Tc=
7
0.6
--25
°
C
0.8
5
°
C
25
°
C
1.0
1.2
1.4
IT14327
Drain Current, ID -- A
1000
7
IT14326
10000
7
SW Time -- ID
td(off)
Ciss, Coss, Crss -- VDS
Ciss
Diode Forward Voltage, VSD -- V
Switching Time, SW Time -- ns
5
3
2
VDD=20V
VGS=10V
Ciss, Coss, Crss -- pF
f=1MHz
5
3
2
tf
100
7
5
3
2
10
0.1
1000
7
5
3
2
100
tr
Coss
Crss
td(on)
2
3
5 7 1.0
2
3
5 7 10
2
3
Drain Current, ID -- A
5 7 100
IT14328
0
5
10
15
20
25
30
35
40
Drain-to-Source Voltage, VDS -- V
IT14329
No. A1396-3/4
ATP208
10
9
VGS -- Qg
VDS=20V
ID=90A
Drain Current, ID -- A
5
3
2
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
ASO
IDP=270A
PW≤10μs
Gate-to-Source Voltage, VGS -- V
8
7
6
5
4
3
2
1
0
0
10
20
30
40
50
60
70
80
90
ID=90A
10
ms
0m
s
D
C
10
1m
s
10
0
μ
s
10
μ
s
Operation in this area
is limited by RDS(on).
op
at
er
io
n
0.1
0.1
Tc=25
°
C
Single pulse
2
3
5
7 1.0
2
3
5
7 10
2
3
5
7
Total Gate Charge, Qg -- nC
70
PD -- Tc
IT14330
120
Drain-to-Source Voltage, VDS -- V
EAS -- Ta
IT14331
Allowable Power Dissipation, PD -- W
60
50
40
30
20
10
0
0
20
40
60
80
100
120
140
160
Avalanche Energy derating factor -- %
100
80
60
40
20
0
0
25
50
75
100
125
150
175
IT10478
Case Temperature, Tc --
°C
IT14332
Ambient Temperature, Ta --
°C
Note on usage : Since the ATP208 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of January , 2009. Specifications and information herein are subject
to change without notice.
PS No. A1396-4/4
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