2SK1901 datasheet, PDF - EEWORLD Datasheet

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2SK1901: DescriptionPower Field-Effect Transistor, 12A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size36KB，1 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SK1901 Overview

Power Field-Effect Transistor, 12A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

2SK1901 Parametric

Parameter Name	Attribute value
Parts packaging code	SFM
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	12 A
Maximum drain current (ID)	12 A
Maximum drain-source on-resistance	0.16 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	50 W
Maximum power dissipation(Abs)	50 W
Maximum pulsed drain current (IDM)	48 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Transistor component materials	SILICON
Base Number Matches	1

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2SK1901 Related Products

	2SK1901	2SK1902	2SK1903
Description	Power Field-Effect Transistor, 12A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	Power Field-Effect Transistor, 15A I(D), 100V, 0.135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	Power Field-Effect Transistor, 25A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Parts packaging code	SFM	SFM	SFM
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3	3
Reach Compliance Code	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	100 V	100 V	100 V
Maximum drain current (Abs) (ID)	12 A	15 A	25 A
Maximum drain current (ID)	12 A	15 A	25 A
Maximum drain-source on-resistance	0.16 Ω	0.135 Ω	0.08 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	50 W	60 W	70 W
Maximum power dissipation(Abs)	50 W	60 W	70 W
Maximum pulsed drain current (IDM)	48 A	60 A	100 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON	SILICON
Base Number Matches	1	1	1

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