ES3A thru ES3J
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Glass passivated chip junction
- Ideal for automated placement
- Super fast recovery time for high efficiency
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Surface Mount Super Fast Rectifiers
MECHANICAL DATA
Case:
DO-214AB (SMC)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.21 g (approximately)
DO-214AB (SMC)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
I
F
= 3 A
Maximum reverse current @ rated VR
T
J
=25
℃
T
J
=100
℃
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJL
R
θJA
T
J
T
STG
45
12
47
- 55 to +150
- 55 to +150
0.95
10
500
35
30
O
ES
3A
50
35
50
ES
3B
100
70
100
ES
3C
150
105
150
ES
3D
200
140
200
3
100
ES
3F
300
210
300
ES
3G
400
280
400
ES
3H
500
350
500
ES
3J
600
420
600
Unit
V
V
V
A
A
1.3
1.7
V
μA
ns
pF
C/W
O
O
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
C
C
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Document Number: DS_D1405069
Version: I14
ES3A thru ES3J
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
AEC-Q101
QUALIFIED
ES3x
(Note 1)
R7
Prefix "H"
R6
M6
Suffix "G"
PACKING CODE
GREEN COMPOUND
CODE
SMC
SMC
SMC
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
PACKAGE
PACKING
Note 1: "xx" defines voltage from 50V (ES3A) to 600V (ES3J)
EXAMPLE
PREFERRED P/N PART NO.
ES3J R7
ES3J R7G
ES3JHR7
ES3J
ES3J
ES3J
H
AEC-Q101
QUALIFIED
PACKING CODE
R7
R7
R7
G
Green compound
AEC-Q101 qualified
GREEN COMPOUND
CODE
DESCRIPTION
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG.1 MAXIMUM FORWARD CURRENT
DERATING CURVE
PEAK FORWARD SURGE CURRENT (A)
3.5
100
90
80
70
60
50
40
30
20
10
0
1
10
NUMBER OF CYCLES AT 60 Hz
8.3ms Half Sin Wave
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
AVERAGE FORWARD CURRENT (A)
3
2.5
2
1.5
1
0.5
0
0
25
50
75
100
125
150
100
LEAD TEMPERATURE (
o
C)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT
(A)
INSTANTANEOUS REVERSE CURRENT
(μA)
10
1000
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
ES3F-3G
ES3A-3D
1
ES3H-3J
100
TJ=125℃
10
TJ=75℃
1
TJ=25℃
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
0.1
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
FORWARD VOLTAGE (V)
Document Number: DS_D1405069
Version: I14
ES3A thru ES3J
Taiwan Semiconductor
FIG. 5 TYPICAL JUNCTION CAPACITANCE
105
90
JUNCTION CAPACITANCE (pF)
75
60
ES3A-3D
45
30
15
0
1
10
REVERSE VOLTAGE (V)
100
ES3F-3J
f=1.0MHz
Vsig=50mVp-p
100
TRANSIENT THERMAL IMPEDANCE
A
(℃/W)
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
10
1
0.1
0.01
0.1
1
HEATING TIME (s)
10
100
PACKAGE OUTLINE DIMENSIONS
Unit (mm)
Min
2.90
6.60
5.59
2.00
1.00
7.75
0.10
0.15
Max
3.20
7.11
6.22
2.62
1.60
8.13
0.20
0.31
Unit (inch)
Min
0.114
0.260
0.220
0.079
0.039
0.305
0.004
0.006
Max
0.126
0.280
0.245
0.103
0.063
0.320
0.008
0.012
DIM.
A
B
C
D
E
F
G
H
Document Number: DS_D1405069
Version: I14
ES3A thru ES3J
Taiwan Semiconductor
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
Unit (mm)
3.3
2.5
6.8
4.4
9.4
Unit (inch)
0.130
0.098
0.268
0.173
0.370
MARKING DIAGRAM
P/N
G
YW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
Document Number: DS_D1405069
Version: I14
ES3A thru ES3J
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1405069
Version: I14