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800R160MW500XT

Description
Ceramic Capacitor, Multilayer, Ceramic, 500V, 20% +Tol, 20% -Tol, C0G, 30ppm/Cel TC, 0.000016uF, Surface Mount, 0709, CHIP
CategoryPassive components    capacitor   
File Size227KB,4 Pages
ManufacturerATC [American Technical Ceramics]
Download Datasheet Parametric View All

800R160MW500XT Overview

Ceramic Capacitor, Multilayer, Ceramic, 500V, 20% +Tol, 20% -Tol, C0G, 30ppm/Cel TC, 0.000016uF, Surface Mount, 0709, CHIP

800R160MW500XT Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerATC [American Technical Ceramics]
package instruction, 0709
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresSTANDARDS:MIL-PRF-55681; MIL-PRF-123
capacitance0.000016 µF
Capacitor typeCERAMIC CAPACITOR
dielectric materialsCERAMIC
high2.92 mm
JESD-609 codee0
length1.78 mm
Installation featuresSURFACE MOUNT
multi-layerYes
negative tolerance20%
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package shapeRECTANGULAR PACKAGE
Package formSMT
method of packingTR
positive tolerance20%
Rated (DC) voltage (URdc)500 V
series800R
size code0709
surface mountYES
Temperature characteristic codeC0G
Temperature Coefficient-/+30ppm/Cel ppm/°C
Terminal surfaceTin/Lead (Sn/Pb) - with Nickel (Ni) barrier
Terminal shapeWRAPAROUND
width2.29 mm
ATC 800 R Series
NPO Ceramic, High RF Power
Lowest ESR
Multilayer Capacitors
• Case R Size
(.070" x .090")
• Rugged, reliable
NPO dielectric
• Optimized for highest
self resonant frequency
• Capacitance Range
1 pF to 100 pF
• Optimized for lowest ESR
and superior heat transfer
• Capable of highest
RF Power
• RoHS Compliant / Lead-Free
ATC’s 800 R Series offers superb performance in demanding high RF
power applications requiring consistent and reliable operation. The
combination of optimized case geometry, highly conductive electrode
formulations and proprietary dielectrics, yields the lowest ESR and
superior heat transfer. ATC’s new NPO low loss rugged dielectrics are
designed to provide superior heat transfer in high RF power applications.
Ultra-low ESR and superior thermal performance ensure that the 800 R
Series products are your best choice for high RF power applications from
UHF through microwave frequencies.
Typical applications: WiMAX / LTE*, Homeland Security / Public Safety
Radio (APCO-25), Satellite Systems, Avionics, Digital HD FM Transmitters,
Digital HDTV Transmitters, Microwave Communications and Medical
Electronics.
Typical circuit applications: High RF Power Filter Networks, Combiners,
Couplers, Matching Networks, Output Coupling, Antenna Coupling, and
DC Blocking and Bypassing.
* Long term evolution
ELECTRICAL AND MECHANICAL
SPECIFICATIONS
QUALITY FACTOR (Q):
2,000 @ 1 MHz
TEMPERATURE COEFFICIENT OF CAPACITANCE (TCC):
0 ±30 PPM/°C (-55°C to +125°C)
INSULATION RESISTANCE (IR):
1 pF to 100 pF:
10
5
Megohms min. @ +25°C at rated WVDC
10
4
Megohms min. @ +125°C at rated WVDC
WORKING VOLTAGE (WVDC):
500 WVDC
DIELECTRIC WITHSTANDING VOLTAGE (DWV):
Case R: 250% of rated WVDC for 5 secs
AGING EFFECTS:
None
PIEZOELECTRIC EFFECTS:
None
(No capacitance variation with voltage or pressure)
CAPACITANCE DRIFT:
±(0.02% or 0.02 pF), whichever is greater
OPERATING TEMPERATURE RANGE:
From -55°C to +125°C
TERMINATION STYLES:
RoHS Compliant and Solder Plate
See Mechanical Configurations, page 3
TERMINAL STRENGTH:
Terminations for chips withstand a pull of 5
lbs. min., 15 lbs. typical, for 5 seconds in direction perpendicular to the
termination surface of the capacitor. Test per MIL-STD-202, Method 211.
ENVIRONMENTAL TESTS
ATC 800 R Series Capacitors are designed and manufactured to meet and
exceed the requirements of EIA-198, MIL-PRF-55681 and MIL-PRF-123.
THERMAL SHOCK:
MIL-STD-202, Method 107, Condition A
MOISTURE RESISTANCE:
MIL-STD-202, Method 106
LOW VOLTAGE HUMIDITY:
MIL-STD-202, Method 103, Condition A, with 1.5 Volts D.C. applied while
subjected to an environment of 85°C with 85% relative humidity for 240
hours min.
LIFE TEST:
MIL-STD-202, Method 108, for 2000 hours, at 125°C
200% WVDC applied
ATC # 001-1029 Rev. H; 7/12
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