BCR 48PN
NPN/PNP Silicon Digital Tansistor Array
• Switching circuit, inverter, interface circuit,
drive circuit
• Two (galvanic) internal isolated NPN/PNP
Transistor in one package
• Built in bias resistor
NPN: R1 = 47kΩ, R2 = 47kΩ
PNP: R1 = 2.2kΩ, R2 = 47kΩ
Tape loading orientation
Type
BCR 48PN
Marking Ordering Code Pin Configuration
WTs
Package
Q62702-C2496 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Emitter-base voltage
DC collector current
DC collector current
Input on voltage
Input on voltage
Junction temperature
Storage temperature
Thermal Resistance
Junction ambient
1)
Symbol
Values
50
50
10
5
70
100
50
10
250
150
- 65 ... + 150
≤
275
≤
140
Unit
V
V
CEO
V
CBO
NPN
PNP
NPN
PNP
NPN
PNP
V
EBO
V
EBO
I
C
I
C
V
i(on)
V
i(on)
P
tot
T
j
T
stg
R
thJA
R
thJS
mA
V
mW
°C
Total power dissipation,
T
S
= 115°C
K/W
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm
2
Cu
Semiconductor Group
1
Dec-09-1996
BCR 48PN
Electrical Characteristics
at
T
A
=25°C, unless otherwise specified
Parameter
Symbol
min.
DC Characteristics for NPN Type
Collector-emitter breakdown voltage
Values
typ.
max.
Unit
V
(BR)CEO
50
-
-
-
-
-
-
-
-
47
1
-
-
V
I
C
= 100 µA,
I
B
= 0
Collector-base breakdown voltage
V
(BR)CBO
50
I
C
= 100 µA,
I
B
= 0
Collector cutoff current
I
CBO
-
100
nA
µA
-
164
-
70
-
mV
-
0.3
V
0.8
1.5
3
62
1.1
kΩ
-
V
CB
= 40 V,
I
E
= 0
Emitter cutoff current
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
1
V
EB
= 10 V,
I
C
= 0
DC current gain
I
C
= 5 mA,
V
CE
= 5 V
Collector-emitter saturation voltage 1)
I
C
= 10 mA,
I
B
= 0.5 mA
Input off voltage
I
C
= 100 µA,
V
CE
= 5 V
Input on Voltage
I
C
= 2 mA,
V
CE
= 0.3 V
Input resistor
Resistor ratio
AC Characteristics for NPN Type
Transition frequency
R
1
R
1
/R
2
f
T
32
0.9
MHz
-
100
3
-
pF
-
-
I
C
= 10 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
C
cb
V
CB
= 10 V,
f
= 1 MHz
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group
2
Dec-09-1996
BCR 48PN
Electrical Characteristics
at
T
A
=25°C, unless otherwise specified
Parameter
Symbol
min.
DC Characteristics for PNP Type
Collector-emitter breakdown voltage
Values
typ.
max.
Unit
V
(BR)CEO
50
-
-
-
-
-
-
-
-
2.2
0.047
-
-
V
I
C
= 100 µA,
I
B
= 0
Collector-base breakdown voltage
V
(BR)CBO
50
I
C
= 100 µA,
I
B
= 0
Collector cutoff current
I
CBO
-
100
164
nA
V
CB
= 40 V,
I
E
= 0
Emitter cutoff current
I
EBO
-
V
EB
= 5 V,
I
C
= 0
DC current gain
h
FE
70
-
-
V
-
0.3
0.8
1.1
2.9
0.052
kΩ
-
I
C
= 5 mA,
V
CE
= 5 V, BC ... 16 W
Collector-emitter saturation voltage 1)
V
CEsat
V
i(off)
0.4
I
C
= 10 mA,
I
B
= 0.5 mA
Input off voltage
I
C
= 100 µA,
V
CE
= 5 V
Input on voltage
V
i(on)
0.5
I
C
= 2 mA,
V
CE
= 0.3 V
Input resistor
Resistor ratio
AC Characteristics for PNP Type
Transition frequency
R
1
R
1
/R
2
f
T
1.5
0.042
MHz
-
200
3
-
pF
-
-
I
C
= 10 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
C
cb
V
CB
= 10 V,
f
= 1 MHz
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group
3
Dec-09-1996
BCR 48PN
NPN TYPE
DC Current Gain
h
FE
=
f (I
C
)
V
CE
= 5V (common emitter configuration)
Collector-Emitter Saturation Voltage
V
CEsat
=
f(I
C
),
h
FE
= 20
10
3
10
2
-
h
FE
10
2
I
C
mA
10
1
10
1
10
0
-1
10
10
0
10
1
10
2
mA
I
C
10
0
0.0
0.2
0.4
0.6
V
1.0
V
CEsat
Input on Voltage
V
i(on)
=
f(I
C
)
V
CE
= 0.3V (common emitter configuration)
Input off voltage
V
i(off)
=
f(I
C
)
V
CE
= 5V (common emitter configuration)
10
2
10
1
mA
mA
I
C
10
1
I
C
10
0
10
-1
10
0
10
-2
10
-1
-1
10
10
0
10
1
V
V
i(on)
10
-3
0
1
2
3
V
5
V
i(off)
Semiconductor Group
4
Dec-09-1996
BCR 48PN
PNP TYPE
DC Current Gain
h
FE
=
f (I
C
)
V
CE
= 5V (common emitter configuration)
Collector-Emitter Saturation Voltage
V
CEsat
=
f(I
C
),
h
FE
= 20
10
3
10
2
-
h
FE
10
2
I
C
mA
10
1
10
1
10
0
-1
10
10
0
10
1
mA
I
C
10
0
0.0
0.1
0.2
0.3
V
0.5
V
CEsat
Input on Voltage
V
i(on)
=
f(I
C
)
V
CE
= 0.3V (common emitter configuration)
Input off voltage
V
i(off)
=
f(I
C
)
V
CE
= 5V (common emitter configuration)
10
2
10
1
mA
mA
I
C
10
1
I
C
10
0
10
-1
10
0
10
-2
10
-1
-1
10
10
0
10
1
V
V
i(on)
10
-3
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V 1.0
V
i(off)
Semiconductor Group
5
Dec-09-1996
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