LSDB3, LSDB4
SILICON BIDIRECTIONAL DIACS
The glass passivated, three-layer, two terminal, axial lead,
hermetically sealed diacs are designed specifically for
triggering thyristors. They demonstrate low breakover current
at breakover voltage as they withstand peak pulse current.
The breakover symmetry is within four volts with a typical
breakover voltage of LSDB3 32 V, LSDB4 40 V. These diacs
are intended for use in thyristor phase control, circuits for
lamp-dimming, universal-motor speed controls, and heat
controls.
Storage Temperature Range
T
S
- 40 C to +150 C
O
O
LS-34
QuadroMELF
Dimensions in mm
Operating Temperature Range T
J
- 40
O
C to +100
O
C
MAXIMUM RATINGS at 50
O
C Ambient
Peak Current (10 µs duration, 120 cycle repetition rate) I
P
± 2 A Max.
Peak output voltage e
P
3 ± Volts Max.
1)
Characteristics at T
a
= 25
O
C
Parameter
Breakover Voltage
Breakover Currents
Breakover Voltage Symmetry
Dynamic Breakover Voltage
ΔI
=
[I
BR
to I
F
= 10 mA]
Thermal Impedance Junction to Ambient Air
LSDB3
LSDB4
Symbol
V
(BR)1
and V
(BR)2
I
(BR)1
and I
(BR)2
[V
(BR)1
]-[V
(BR)2
]
|
ΔV
± |
R
θJA
Min.
28
35
-
-
5
-
Max.
36
45
200
3.8
-
60
O
Unit
V
µA
V
V
C/W
DIAC
load up to 1500 W
3.3 K
60~
120 V
0.1
u
F
20
ep
120 VAC
60 Hz
200 K
TRIAC
1)
CIRCUIT FOR PEAK OUTPUT VOLTAGE TEST
0.1
u
F
100 V
BILATERAL
TRIGGER
DIAC
TYPICAL DIAC-TRIAC FULL-WAVE PHASE
CONTROL CIRCUIT
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 18/01/2008
stm32/stm8
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